Development of High Temperature Operation SiC Power Module

2018 ◽  
Vol 86 (12) ◽  
pp. 83-90 ◽  
Author(s):  
Shinji Sato ◽  
Fumiki Kato ◽  
Hidekazu Tanisawa ◽  
Kenichi Koui ◽  
Kinuyo Watanabe ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Module ◽  
High Temperature Operation

Thermal Resistance Evaluation of a Low-Inductance Double-Stacked SiN-AMC Substrate for a High-Temperature Operation SiC Power Module

2018 ◽  
Vol 86 (12) ◽  
pp. 107-112
Author(s):  
Fumiki Kato ◽  
Shinji Sato ◽  
Hidekazu Tanisawa ◽  
Kenichi Koui ◽  
Kinuyo Watanabe ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Resistance ◽  
Power Module ◽  
Resistance Evaluation ◽  
High Temperature Operation

Sandwich Structured Power Module for High Temperature SiC Power Semiconductor Devices

2014 ◽  
Vol 2014 (1) ◽  
pp. 000757-000762 ◽  
Author(s):  
Takeshi ANZAI ◽  
Yoshinori MURAKAMI ◽  
Shinji SATO ◽  
Hidekazu TANISAWA ◽  
Kohei HIYAMA ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
High Temperature ◽  
Semiconductor Devices ◽  
Ceramic Substrate ◽  
Power Module ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
High Temperature Operation

A high temperature sandwich structured power module for high temperature SiC power semiconductor devices has been accomplished. Problems were found in the high temperature building-up process of the module caused by excess warpage of the ceramic substrate. Also the high temperature operation of the power module brings an excess warpage of the structure caused by parts having different coefficients of thermal expansion (CTEs) from each other. In this paper, some countermeasures to overcome the problems are demonstrated.

scholarly journals A study on electro thermal response of SiC power module during high temperature operation

2008 ◽  
Vol 5 (16) ◽  
pp. 597-602 ◽  
Author(s):  
Tsuyoshi Funaki ◽  
Akira Nishio ◽  
Tsunenobu Kimoto ◽  
Takashi Hikihara
Keyword(s):  
High Temperature ◽  
Thermal Response ◽  
Power Module ◽  
High Temperature Operation

Warpage Evaluation of High-Temperature Sandwich-Structured Power Module for SiC Power Semiconductor Devices

2015 ◽  
Vol 12 (3) ◽  
pp. 153-160 ◽  
Author(s):  
Takeshi Anzai ◽  
Yoshinori Murakami ◽  
Shinji Sato ◽  
Hidekazu Tanisawa ◽  
Kohei Hiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Cycle ◽  
Coefficient Of Thermal Expansion ◽  
Fabrication Process ◽  
Power Module ◽  
Ceramic Substrates ◽  
Soldering Temperature ◽  
Power Semiconductor ◽  
Power Modules ◽  
High Temperature Operation

This article presents a sandwich-structured SiC power module that can be operated at 225°C. The proposed power module has two ceramic substrates that are made of different materials (Si3N4 and Al2O3). The SiC devices are sandwiched between these ceramic substrates. The module also has a baseplate soldered onto the ceramic substrate. Conventional power modules use baseplate materials with a large coefficient of thermal expansion (CTE), for example, Cu (17–18 ppm/°C and Al (23–24 ppm/°C). In the fabrication process, the soldering temperature reaches 450°C because Au-Ge eutectic solder is used. A problem was found in the fabrication process of the module because of the high soldering temperature and CTE mismatches of the components. Furthermore, for high-temperature operation, a thermal cycle of −40°C to 250°C will be needed to ensure reliability and it is important to decrease the warpage of the module during the thermal cycle. By using stainless steel (CTE: 10 ppm/°C) for the baseplate, the warp-age measured at room temperature was reduced to one-third that of a module using a Cu baseplate. Further, the warpage displacement from 50°C to 250°C was also reduced.

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