(Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

2018 ◽  
Vol 86 (7) ◽  
pp. 163-175 ◽  
Author(s):  
Clement Porret ◽  
Andriy Yakovitch Hikavyy ◽  
Juan Fernando Gomez Granados ◽  
Sylvain Baudot ◽  
Anurag Vohra ◽  
...  
Keyword(s):  
Low Temperature ◽  
Group Iv ◽  
3D Integration ◽  
Group Iv Semiconductors ◽  
Low Temperature Epitaxy ◽  
Very Low Temperature

Very Low Temperature Epitaxy of Heavily In-situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers

2016 ◽  
Vol 75 (8) ◽  
pp. 387-398 ◽  
Author(s):  
J. Aubin ◽  
J.-M. Hartmann ◽  
J.-P. Barnes ◽  
J.-B. Pin ◽  
M. Bauer
Keyword(s):  
Low Temperature ◽  
Low Temperature Epitaxy ◽  
Very Low Temperature

Very Low Temperature Epitaxy of Heavily In Situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers

2016 ◽  
Vol 6 (1) ◽  
pp. P21-P26 ◽  
Author(s):  
J. Aubin ◽  
J. M. Hartmann ◽  
J. P. Barnes ◽  
J. B. Pin ◽  
M. Bauer
Keyword(s):  
Low Temperature ◽  
Low Temperature Epitaxy ◽  
Very Low Temperature

A TEM study of low-temperature Ge growth on Ge(001)2×1

1993 ◽  
Vol 51 ◽  
pp. 804-805
Author(s):  
H.Z. Xiao ◽  
G. Xue ◽  
I.M. Robertson ◽  
H.K. Birnbaum ◽  
J.E. Greene
Keyword(s):  
Low Temperature ◽  
High Energy ◽  
Group Iv ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Group Iv Semiconductors ◽  
Transmission Electron ◽  
And Control ◽  
Post Deposition

One approach to a solution of the doping problem in the molecular beam epitaxy (MBE) growth of the group IV semiconductors, e.g., segregation, low incorporation, and control of the dopants, is to lower the growth temperatures. It has been found that the room temperature Si deposition becomes amorphous after growth of a limiting epitaxial thickness which increases rapidly with the growth temperature. However, the mechanism for this structural transition is not well understood. In the present paper, we report the preliminary results of a study on the mechanism of the low temperature MBE growth of Ge on Ge(001)2×1 over the temperature range of 20-100 °C at deposition rates R=0.05 and 0.1 nm s−1 in an MBE system which has a bass pressure of 5xl0−11 Torr which increases to about 2xl0−9 Torr during deposition. The structural transitions were investigated using a combination of in-situ reflection high-energy electron diffraction (RHEED) and post-deposition high resolution cross-sectional transmission electron microscopy (XTEM).

ISOMER-SHIFT SYSTEMATICS OF 57Co IMPLANTED IN GROUP IV SEMICONDUCTORS

1976 ◽  
Vol 37 (C6) ◽  
pp. C6-893-C6-896 ◽  
Author(s):  
G. WEYER ◽  
G. GREBE ◽  
A. KETTSCHAU ◽  
B. I. DEUTCH ◽  
A. NYLANDSTED LARSEN ◽  
...  
Keyword(s):  
Isomer Shift ◽  
Group Iv ◽  
Group Iv Semiconductors

RESISTIVITY OF TmSe UNDER PRESSURE AT VERY LOW TEMPERATURE

1980 ◽  
Vol 41 (C5) ◽  
pp. C5-177-C5-180
Author(s):  
J. Flouquet ◽  
P. Haen ◽  
F. Holtzberg ◽  
F. Lapierre ◽  
J. M. Mignot ◽  
...  
Keyword(s):  
Low Temperature ◽  
Very Low Temperature
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