scholarly journals Study of the Influence of the Dielectric Composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al Structures on the Resistive Switching Behavior for Memory Applications

2018 ◽  
Vol 85 (8) ◽  
pp. 143-148
Author(s):  
Helena Castán ◽  
Salvador Dueñas ◽  
Kaupo Kukli ◽  
Marianna Kemell ◽  
Mikko Ritala ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Memory Applications

Memristive behavior in BaTiO3/La0.7Sr0.3MnO3 heterostructures integrated with semiconductors

MRS Advances ◽  
2016 ◽  
Vol 1 (4) ◽  
pp. 275-280 ◽  
Author(s):  
Srinivasa Rao Singamaneni ◽  
John Prater ◽  
Bongmook Lee ◽  
Veena Misra ◽  
Jay Narayan
Keyword(s):  
Resistive Switching ◽  
Ferroelectric Materials ◽  
Hysteretic Behavior ◽  
Buffer Layers ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Memristive Behavior ◽  
Non Volatile Memory ◽  
Piezo Force Microscopy ◽  
Memory Applications

ABSTRACTFerroelectric materials such as BaTiO3 have been studied for emerging non-volatile memory applications. However, most of the previous work has been focused on this material when it was deposited on insulting oxide substrates such as SrTiO3. Unfortunately, this substrate is not suitable for CMOS-based microelectronics applications. This motivated us to carry out the present work. We have studied the resistive switching behavior in BaTiO3/La0.7Sr0.3MnO3 (BTO/LSMO) heterostructures integrated with semiconducting substrates Si (100) using MgO/TiN buffer layers by pulsed laser deposition. Current-Voltage (I-V) measurements were conducted on BTO (500nm)/LSMO (25nm) devices at 200K. We have observed a broad hysteresis in forward and reverse voltage sweeps which is an important property for memory applications. Secondly, the RON/ROFF ratio is estimated at ∼ 150, consistent with the reported numbers (30-100) in the literature. Thirdly, the device is stable at least up to 50 cycles. However, we found that hysteretic behavior was suppressed upon oxygen annealing of the device at 1 atmospheric pressure, 200° C for 1hr, inferring the important role of oxygen vacancies in the resistive switching behavior of BTO/LSMO device. Future work will focus on investigating the correlation between ferroelectricity and resistive switching in these devices using local probe technique piezo force microscopy (PFM) technique.

scholarly journals Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications

2014 ◽  
Vol 9 (1) ◽  
pp. 3 ◽  
Author(s):  
Somnath Mondal ◽  
Jim-Long Her ◽  
Keiichi Koyama ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Memory Applications
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