Improving the Figure-of-Merit of Integrated Solid-State Diodes through the Use of Nanostructured Porous Silicon

2018 ◽  
Vol 85 (6) ◽  
pp. 89-92
Author(s):  
Lucanos M Strambini ◽  
Marco Marchesi ◽  
Marco Sambi ◽  
Fabrizio Fausto Renzo Toia ◽  
Simone Dario Mariani ◽  
...  
Keyword(s):  
Solid State ◽  
Porous Silicon ◽  
Figure Of Merit

A p-nitroaniline redox-active solid-state electrolyte for battery-like electrochemical capacitive energy storage combined with an asymmetric supercapacitor based on metal oxide functionalized β-polytype porous silicon carbide electrodes

2017 ◽  
Vol 46 (20) ◽  
pp. 6588-6600 ◽  
Author(s):  
Myeongjin Kim ◽  
Jeeyoung Yoo ◽  
Jooheon Kim
Keyword(s):  
Silicon Carbide ◽  
Energy Storage ◽  
Solid State ◽  
Porous Silicon ◽  
Energy Density ◽  
Metal Oxide ◽  
Asymmetric Supercapacitor ◽  
Capacitive Energy Storage ◽  
Solid State Electrolyte ◽  
Redox Active

A unique redox active flexible solid-state asymmetric supercapacitor with ultra-high capacitance and energy density was fabricated.

Characterization of Porous Silicon by Solid-State Nuclear Magnetic Resonance

1996 ◽  
Vol 100 (50) ◽  
pp. 19653-19658 ◽  
Author(s):  
W. K. Chang ◽  
M. Y. Liao ◽  
K. K. Gleason
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Solid State ◽  
Magnetic Resonance ◽  
Porous Silicon ◽  
Nuclear Magnetic

scholarly journals Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

2020 ◽  
Author(s):  
Mikhail Vladimirovich Dorokhin ◽  
Polina Borisovna Demina ◽  
Irina Viktorovna Erofeeva ◽  
Yuri Mikhailovich Kuznetsov ◽  
Anton Vladimirovich Zdoroveyshchev ◽  
...  
Keyword(s):  
Solid State ◽  
Figure Of Merit ◽  
Heating Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Solid State Sintering ◽  
Maximum Heating Temperature ◽  
Spark Plasma ◽  
Maximum Heating

Abstract Thermoelectric Si 0,65 Ge 0,35 Sb δ materials have been fabricated by spark plasma sintering of Ge-Si-Sb powder mixture. The electronic properties of Si 0,65 Ge 0,35 Sb δ were found to be dependent on the uniformity of mixing of the components, which in turn is determined by the maximum heating temperature during solid-state sintering. Provided the concentration of donor Sb impurity is optimized the thermoelectric figure of merit for the investigated structures can be as high as 0.628 at the temperature of 490 °С, the latter value is comparable with world-known analogues obtained for Si 1- x Ge x P δ .

Visible Electroluminescence of Porous Silicon Devices with a Solid State Contact

1991 ◽  
Vol 256 ◽  
Author(s):  
A. Richter ◽  
W. Lang ◽  
P. Steiner ◽  
F. Kozlowski ◽  
H. Sandmaier
Keyword(s):  
Solid State ◽  
Porous Silicon ◽  
Visible Light ◽  
Ultraviolet Light ◽  
Anodic Dissolution ◽  
Porous Layer ◽  
Electrical Current ◽  
Light Emitting ◽  
Silicon Devices

ABSTRACTThe photoluminescence and electroluminescence of light emitting porous silicon (LEPOS) is described. The porous silicon is made by anodic dissolution of silicon in HF with an applied electrical current and illumination with visible light. Photoluminescence is observed using ultraviolet light, visible electroluminescence is achieved by applying a voltage to a solid state contact on top of the porous layer. The luminescence, the structure and the composition of the LEPOS are studied.

Thermoelectric Properties of Solid-State Synthesized Magnesium Silicides Doped with Group BI-III Elements

2012 ◽  
Vol 724 ◽  
pp. 385-388 ◽  
Author(s):  
Sin Wook You ◽  
Soon Mok Choi ◽  
Won Seon Seo ◽  
Sun Uk Kim ◽  
Kyung Wook Jang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Solid State ◽  
Mechanical Alloying ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Solid State Reaction ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Group B

Group BI(Cu, Ag)-, BII(Zn)- and BIII(Al, In)-doped Mg2Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, power factor, thermal conductivity and figure of merit) were examined. Mg2Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. It was fully consolidated by hot pressing at 1073 K for 1 h. The electrical conductivity increased by doping due to an increase in the carrier concentration. However, the thermal conductivity did not changed significantly by doping, which was due to much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group BIII(Al, In) elements were more effective to enhance the thermoelectric properties of Mg2Si.

Quasi-solid state nanoparticle/(ionic liquid) gels with significantly high ionic thermoelectric properties

2020 ◽  
Vol 8 (21) ◽  
pp. 10813-10821 ◽  
Author(s):  
Xu He ◽  
Hanlin Cheng ◽  
Shizhong Yue ◽  
Jianyong Ouyang
Keyword(s):  
Ionic Liquid ◽  
Solid State ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

An ionogel made of EMIM-DCA and SiO2 nanoparticles can exhibit an ionic thermoelectric figure of merit (ZT) of 1.47.

Storage of luminescent nanoparticles in porous silicon: Toward a solid state “golden fleece”

2011 ◽  
Vol 65 (15-16) ◽  
pp. 2514-2517 ◽  
Author(s):  
T. Serdiuk ◽  
V.A. Skryshevsky ◽  
I.I. Ivanov ◽  
V. Lysenko
Keyword(s):  
Solid State ◽  
Porous Silicon ◽  
Luminescent Nanoparticles
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