Visible Electroluminescence of Porous Silicon Devices with a Solid State Contact

1991 ◽  
Vol 256 ◽  
Author(s):  
A. Richter ◽  
W. Lang ◽  
P. Steiner ◽  
F. Kozlowski ◽  
H. Sandmaier
Keyword(s):  
Solid State ◽  
Porous Silicon ◽  
Visible Light ◽  
Ultraviolet Light ◽  
Anodic Dissolution ◽  
Porous Layer ◽  
Electrical Current ◽  
Light Emitting ◽  
Silicon Devices

ABSTRACTThe photoluminescence and electroluminescence of light emitting porous silicon (LEPOS) is described. The porous silicon is made by anodic dissolution of silicon in HF with an applied electrical current and illumination with visible light. Photoluminescence is observed using ultraviolet light, visible electroluminescence is achieved by applying a voltage to a solid state contact on top of the porous layer. The luminescence, the structure and the composition of the LEPOS are studied.

Visible Electroluminescence from Al-Porous Silicon Reverse Bias Diodes Formed on the Base of Degenerate N-Type Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
S. Lazarouk ◽  
V. Bondarenko ◽  
P. Pershukevich ◽  
S. La Monica ◽  
G. Maiello ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Reverse Bias ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Forward Bias ◽  
Applied Bias ◽  
Light Emitting ◽  
Type Silicon ◽  
Silicon Devices ◽  
Preparation Conditions

ABSTRACTWe demonstrate current induced visible light emission from Schottky junctions between aluminium electrodes and porous silicon formed by electrochemical etching of degenerate n+ -type silicon. HF concentration and anodizing current were chosen to yield preparation conditions in the transition region between electropolishing and porous silicon formation regimes. The light emitting diodes were formed by magnetron sputtering of aluminum on the porous silicon surface. Visible electroluminescence (EL) was recorded when dc or ac voltages larger than 4 V were applied between the aluminium electrodes. The visible EL appears in the dark, at the edge of the electrodes at a reverse bias of 5-6 V. The intensity of emitted light increases with applied voltage; at applied bias higher than 7 V the light emitted was observable by the naked eye at normal daylight. Compared to forward bias solid state contact porous silicon devices, the structure has an increased stability (after 100 hours of continuous operation under a 7 V reverse bias, no appreciable modification was observed in emission intensity). The main features of this electroluminescence are very similar to the ones observed under avalanche breakdown of silicon p-n junctions.

scholarly journals Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

2014 ◽  
Vol 116 (5) ◽  
pp. 053104 ◽  
Author(s):  
Michael Moseley ◽  
Andrew Allerman ◽  
Mary Crawford ◽  
Jonathan J. Wierer ◽  
Michael Smith ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Electrical Current ◽  
Threading Dislocations ◽  
Current Leakage ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
Open Core

Temperature-dependent picosecond time-resolved carrier dynamics in visible-light-emitting porous silicon

1994 ◽  
Vol 91 (3) ◽  
pp. 239-243 ◽  
Author(s):  
Jian Wang ◽  
Wen-cheng Wang ◽  
Jia-biao Zheng ◽  
Fu-long Zhang ◽  
Xiao-yuan Hou ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Carrier Dynamics ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Light Emitting

Microstructure of Visible Light Emitting Porous Silicon

1992 ◽  
Vol 31 (Part 2, No. 9A) ◽  
pp. L1219-L1222 ◽  
Author(s):  
Akio Nishida ◽  
Kiyokazu Nakagawa ◽  
Hiroshi Kakibayashi ◽  
Toshikazu Shimada
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Light Emitting
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