(Invited) Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer

2017 ◽  
Vol 80 (4) ◽  
pp. 97-106 ◽  
Author(s):  
Hiroshi Nakashima ◽  
Hayato Okamoto ◽  
Keisuke Yamamoto ◽  
Dong Wang
Keyword(s):  
Contact Resistivity ◽  
Amorphous Interlayer

Contact resistivity of IR lamp alloyed Au-Ge metallisation on GaAs

1984 ◽  
Vol 20 (22) ◽  
pp. 944 ◽  
Author(s):  
S.S. Gill ◽  
J.R. Dawsey ◽  
A.G. Cullis
Keyword(s):  
Contact Resistivity

Mo-Fe/NbFeSb Thermoelectric Junctions: Anti-Thermal Aging Interface and Low Contact Resistivity

2021 ◽  
Vol 13 (6) ◽  
pp. 7317-7323
Author(s):  
Zhenyi Wang ◽  
Chenguang Fu ◽  
Kaiyang Xia ◽  
Feng Liu ◽  
Xinbing Zhao ◽  
...  
Keyword(s):  
Thermal Aging ◽  
Contact Resistivity

Development of low contact resistivity electrode for HTSC films

2004 ◽  
Vol 412-414 ◽  
pp. 1060-1065 ◽  
Author(s):  
Atsushi Inoue ◽  
Masahiko Kai ◽  
Saburo Hoshi ◽  
Teruo Izumi ◽  
Yuh Shiohara ◽  
...  
Keyword(s):  
Contact Resistivity

Ultra-Low Resistance Ni-Based Contacts to n-InP: the Dependence of Contact Resistivity on the Condition of the Metal-Semiconductor Interface

1993 ◽  
Vol 318 ◽  
Author(s):  
Navid S. Fatemi ◽  
Victor G. Weizer
Keyword(s):  
Deposition Process ◽  
Atomic Ratio ◽  
Contact Resistivity ◽  
Semiconductor Interface ◽  
Near Surface ◽  
Process Use ◽  
Fold Reduction ◽  
Specific Contact ◽  
Order Of Magnitude ◽  
First Time

ABSTRACTNear-theoretical-minimum values of specific contact resistivity, ρc (in the mid-to-low E-8 Ω-cm2 range) have been achieved for Ni-based contacts to moderately doped (2E18 cm−3) n-type InP. In each case these values are an order of magnitude lower than those previously achieved. These ultra-low resistivities are shown to result when the metallurgical interaction rate between the contact metal and the semiconductor is sufficiently reduced. Several methods of reducing the metal-InP reaction rate and thus achieving lowered resistivity values are demonstrated. We show, for instance, that the introduction of a thin (100Å) Au layer at the metal-InP interface retards metal-semiconductor intermixing during sintering and results in a ten-fold reduction in pc. Another method consists of ensuring the perfection of the near-surface InP lattice prior to and during contact deposition process. Use of this technique has enabled us to fabricate, for the first time, Ni-only contacts with pc values in the low E-8 Ω-cm2 range. We present an explanation for these observations that is based upon the magnitude of the In-to-P atomic ratio at the metal-InP interface.

Simultaneous Occurrence of Multiphases in the Interfacial Reactions of Ultrahigh Vacuum Deposited Ti, Hf and Cr Thin Films on (111)Si

1993 ◽  
Vol 311 ◽  
Author(s):  
W.W. Hsieh ◽  
J.J. Lin ◽  
M.M. Wang ◽  
L.L. Chen
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Simultaneous Occurrence ◽  
Image Simulation ◽  
Reaction Sequence ◽  
Transmission Electron ◽  
Amorphous Interlayer

ABSTRACTSimultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh vacuum deposited Ti, Hf and Cr thin films on (111)Si by high resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the three systems, an amorphous interlayer as well as a number of crystalline phase were found to form simultaneously in the early stages of interfacial reactions. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV deposited refractory thin films. The results called for a reexamination of generally accepted “difference” in reaction sequence between bulk and thin film couples.

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