Contact resistivity of IR lamp alloyed Au-Ge metallisation on GaAs

1984 ◽  
Vol 20 (22) ◽  
pp. 944 ◽  
Author(s):  
S.S. Gill ◽  
J.R. Dawsey ◽  
A.G. Cullis
Keyword(s):  
Contact Resistivity

Mo-Fe/NbFeSb Thermoelectric Junctions: Anti-Thermal Aging Interface and Low Contact Resistivity

2021 ◽  
Vol 13 (6) ◽  
pp. 7317-7323
Author(s):  
Zhenyi Wang ◽  
Chenguang Fu ◽  
Kaiyang Xia ◽  
Feng Liu ◽  
Xinbing Zhao ◽  
...  
Keyword(s):  
Thermal Aging ◽  
Contact Resistivity

Development of low contact resistivity electrode for HTSC films

2004 ◽  
Vol 412-414 ◽  
pp. 1060-1065 ◽  
Author(s):  
Atsushi Inoue ◽  
Masahiko Kai ◽  
Saburo Hoshi ◽  
Teruo Izumi ◽  
Yuh Shiohara ◽  
...  
Keyword(s):  
Contact Resistivity

Ultra-Low Resistance Ni-Based Contacts to n-InP: the Dependence of Contact Resistivity on the Condition of the Metal-Semiconductor Interface

1993 ◽  
Vol 318 ◽  
Author(s):  
Navid S. Fatemi ◽  
Victor G. Weizer
Keyword(s):  
Deposition Process ◽  
Atomic Ratio ◽  
Contact Resistivity ◽  
Semiconductor Interface ◽  
Near Surface ◽  
Process Use ◽  
Fold Reduction ◽  
Specific Contact ◽  
Order Of Magnitude ◽  
First Time

ABSTRACTNear-theoretical-minimum values of specific contact resistivity, ρc (in the mid-to-low E-8 Ω-cm2 range) have been achieved for Ni-based contacts to moderately doped (2E18 cm−3) n-type InP. In each case these values are an order of magnitude lower than those previously achieved. These ultra-low resistivities are shown to result when the metallurgical interaction rate between the contact metal and the semiconductor is sufficiently reduced. Several methods of reducing the metal-InP reaction rate and thus achieving lowered resistivity values are demonstrated. We show, for instance, that the introduction of a thin (100Å) Au layer at the metal-InP interface retards metal-semiconductor intermixing during sintering and results in a ten-fold reduction in pc. Another method consists of ensuring the perfection of the near-surface InP lattice prior to and during contact deposition process. Use of this technique has enabled us to fabricate, for the first time, Ni-only contacts with pc values in the low E-8 Ω-cm2 range. We present an explanation for these observations that is based upon the magnitude of the In-to-P atomic ratio at the metal-InP interface.

Ti/Al- GaN Reaction Mechanism Forming Low Contact Resistivity

2002 ◽  
Vol 743 ◽  
Author(s):  
Yoshimichi Fukasawa ◽  
Tomonori Nakamura ◽  
Tohru Nakamura
Keyword(s):  
Electron Beam ◽  
Reaction Mechanism ◽  
Carrier Concentration ◽  
Ohmic Contacts ◽  
Rutherford Backscattering ◽  
Contact Resistivity ◽  
Ti Alloy ◽  
Sapphire Substrates ◽  
Metal Thickness ◽  
Alloy Metal

ABSTRACTThe mechanism of Ti/Al reaction to n-GaN was studied to form ohmic contacts with low contact resistivity. N-GaN layers with a carrier concentration of 2.17×1018 cm−3 were deposited on sapphire substrates. Ti/Al metals were deposited by conventional electron-beam techniques. Contact resistivity decreased as the Ti thickness increased, and increased as the Al thickness increased. The lowest contact resistivity was measured at 1.20 × 10−6 Ωcm2 for 80 nm Ti /100 nm Al. After annealing at 900 °C, Al/AlTi/TiN layers on GaN were formed and Al Ti alloy thickness decreased as Ti thickness increased, from 1.5 MeV Rutherford Backscattering Spectroscopy(RBS) measurement. It was found that the contact resistivity was reduced as alloy metal thickness into GaN was increased.

An Analysis of Conventional and Self-Aligned four Terminal Resistor Structures for The Determination of The Contact Resistivity from End Resistance Measurements

1986 ◽  
Vol 71 ◽  
Author(s):  
I. Suni ◽  
M. Finetti ◽  
K. Grahn
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Computer Model ◽  
Contact Resistivity ◽  
Experimental Results ◽  
The Finite Element Method ◽  
Model Based ◽  
A Value ◽  
And Diffusion

AbstractA computer model based on the finite element method has been applied to evaluate the effect of the parasitic area between contact and diffusion edges on end resistance measurements in four terminal Kelvin resistor structures. The model is then applied to Al/Ti/n+ Si contacts and a value of contact resistivity of Qc = 1.8×10−7.Ωcm2 is derived. For comparison, the use of a self-aligned structure to avoid parasitic effects is presented and the first experimental results obtained on Al/Ti/n+Si and Al/CoSi2/n+Si contacts are shown and discussed.

Spreading resistance modeling for rapid extraction of contact resistivity with a four-point probe

2021 ◽  
Vol 230 ◽  
pp. 111272
Author(s):  
Deniz Turkay ◽  
Konstantin Tsoi ◽  
Ergi Donercark ◽  
Rasit Turan ◽  
Selcuk Yerci
Keyword(s):  
Contact Resistivity ◽  
Spreading Resistance ◽  
Rapid Extraction ◽  
Resistance Modeling
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