Hole Effective Mass of Strained Ge1-XSnx Alloys P-Channel Quantum-Well MOSFETs on (001), (110), and (111) Ge Substrates

2016 ◽  
Vol 75 (8) ◽  
pp. 571-578 ◽  
Author(s):  
H.-S. Lan ◽  
C. W. Liu
2013 ◽  
Vol 103 (8) ◽  
pp. 082121 ◽  
Author(s):  
F. Sarcan ◽  
O. Donmez ◽  
A. Erol ◽  
M. Gunes ◽  
M. C. Arikan ◽  
...  

1995 ◽  
Vol 78 (10) ◽  
pp. 6327-6329 ◽  
Author(s):  
Hosun Lee ◽  
E. D. Jones ◽  
S. R. Kurtz ◽  
T. Schmiedel ◽  
D. C. Houghton ◽  
...  

Author(s):  
Issei Suzuki ◽  
Zexin Lin ◽  
Sakiko Kawanishi ◽  
Kiyohisa Tanaka ◽  
Yoshitaro Nose ◽  
...  

Valence band dispersions of single-crystalline SnS1-xSex solid solutions were observed by angle-resolved photoemission spectroscopy (ARPES). The hole effective masses, crucial factors in determining thermoelectric properties, were directly evaluated. They decrease...


1997 ◽  
Vol 12 (3) ◽  
pp. 296-299 ◽  
Author(s):  
Zheng Yisong ◽  
Lu Tianquan ◽  
Wang Yiding ◽  
Wu Xuhong ◽  
Zhang Chengxiang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document