Hole Effective Mass of Strained Ge1-XSnx Alloys P-Channel Quantum-Well MOSFETs on (001), (110), and (111) Ge Substrates
2014 ◽
Vol 75
(2)
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pp. 203-211
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2018 ◽
Vol 48
(2)
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pp. 942-950
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1997 ◽
Vol 12
(3)
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pp. 296-299
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