Influence of nitrogen on hole effective mass and hole mobility in p-type modulation doped GaInNAs/GaAs quantum well structures

2013 ◽  
Vol 103 (8) ◽  
pp. 082121 ◽  
Author(s):  
F. Sarcan ◽  
O. Donmez ◽  
A. Erol ◽  
M. Gunes ◽  
M. C. Arikan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Effective Mass ◽  
Hole Mobility ◽  
Hole Effective Mass ◽  
Quantum Well Structures ◽  
P Type

Structural design principles for low hole effective mass s-orbital-based p-type oxides

2017 ◽  
Vol 5 (23) ◽  
pp. 5772-5779 ◽  
Author(s):  
Viet-Anh Ha ◽  
Francesco Ricci ◽  
Gian-Marco Rignanese ◽  
Geoffroy Hautier
Keyword(s):  
Effective Mass ◽  
First Principles ◽  
Structural Design ◽  
Carrier Mobility ◽  
Design Principles ◽  
Hole Effective Mass ◽  
P Type

We demonstrate through first principles computations how the metal–oxygen–metal angle directly drives the hole effective mass (thus the carrier mobility) in p-type s-orbital-based oxides.

A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures

2021 ◽  
Author(s):  
Omer Donmez ◽  
Ayse Erol ◽  
Çağlar Çetinkaya ◽  
Erman Çokduygulular ◽  
Mustafa Aydın ◽  
...  
Keyword(s):  
Quantitative Analysis ◽  
Quantum Well ◽  
Electronic Transport ◽  
Quantum Well Structures ◽  
P Type
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