scholarly journals Hot-Wire Chemical Vapour Deposition for Silicon Nitride Waveguides

2016 ◽  
Vol 72 (4) ◽  
pp. 269-272 ◽  
Author(s):  
T. Dominguez Bucio ◽  
A. Tarazona ◽  
A. Z. Khokhar ◽  
G. Z. Mashanovich ◽  
F. Y. Gardes
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hot Wire

Large-scale synthesis of single-crystal molybdenum trioxide nanobelts by hot-wire chemical vapour deposition

2015 ◽  
Vol 619 ◽  
pp. 406-410 ◽  
Author(s):  
Jianjun Chen ◽  
Mingming Wang ◽  
Xin Liao ◽  
Zhaoxiang Liu ◽  
Judong Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Chemical Vapour Deposition ◽  
Large Scale ◽  
Vapour Deposition ◽  
Molybdenum Trioxide ◽  
Chemical Vapour ◽  
Hot Wire ◽  
Large Scale Synthesis

Improved Efficiency of Single Junction Microcrystalline Silicon n-i-p Solar Cells with an i-Layer Made by Hot-Wire CVD

2007 ◽  
Vol 989 ◽  
Author(s):  
Hongbo Li ◽  
Ronald H.J. Franken ◽  
Robert L. Stolk ◽  
C. H.M. van der Werf ◽  
Jan-Willem A. Schuttauf ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Solar Cells ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Single Junction ◽  
Layer Deposition ◽  
P Cells

AbstractThe influence of the surface roughness of Ag/ZnO coated substrates on the AM1.5 J-V characteristics of microcrystalline silicon (μc-Si:H) solar cells with an i-layer made by the hot-wire chemical vapour deposition (HWCVD) technique is discussed. Cells deposited on substrates with an intermediate rms roughness show the highest efficiency. When using reverse hydrogen profiling during i-layer deposition, an efficiency of 8.5 % was reached for single junction μc-Si:H n-i-p cells, which is the highest for μc-Si:H n-i-p cells with a hot-wire i-layer.

XRD Studies on Residual Stress of the Diamond Films Grown Using Hot Filament Chemical Vapour Deposition Technique on Silicon Nitride and Tungsten Carbide Substrates

2013 ◽  
Vol 686 ◽  
pp. 325-330 ◽  
Author(s):  
Esah Hamzah ◽  
Tze Mi Yong ◽  
Kevin Chee Mun Fai
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Tungsten Carbide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Deposition Technique ◽  
Chemical Vapour Deposition Technique ◽  
Hot Filament

This study analyses residual stress measurement using X-Ray diffraction method on ultrafine-polycrystalline diamonds and polycrystalline diamonds films grown using Hot Filament Chemical Vapour Deposition technique (HFCVD) on silicon nitride(Si3N4) and tungsten carbide (WC) substrates in the same chamber at the same time with varied pretreatments prior to HFCVD diamond deposition. Measurements were taken perpendicular to the surface and the measured residual stress states of the diamond films are in compression. Thus, assuming isotropic properties of the film, the diamond films grown have tension residual stress parallel to the surface of the substrate. Residual stress is estimated to have the lowest stress for substrate that has undergone 5g/liter silicon carbide seeding process. Effects of residual stress to adhesion are discussed for both substrates.

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