(Invited) Low-Temperature Microwave-Based Plasma Oxidation of Ge and Oxidation of Silicon Followed by Plasma Nitridation

2016 ◽  
Vol 72 (4) ◽  
pp. 101-114 ◽  
Author(s):  
W. Lerch ◽  
T. Schick ◽  
N. Sacher ◽  
W. Kegel ◽  
J. Niess ◽  
...  
Keyword(s):  
Low Temperature ◽  
Plasma Oxidation ◽  
Plasma Nitridation

scholarly journals LOW TEMPERATURE PLASMA OXIDATION TREATMENT OF SEVERAL ORGANIC PIGMENTS

1986 ◽  
Vol 15 (5) ◽  
pp. 675-678 ◽  
Author(s):  
Tatuhiko Ihara ◽  
Seisirô Itô ◽  
Mitsuo Kiboku
Keyword(s):  
Low Temperature ◽  
Plasma Oxidation ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Oxidation Treatment ◽  
Organic Pigments

Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

1995 ◽  
Vol 387 ◽  
Author(s):  
Po-ching Chen ◽  
Klaus Yung-jane Hsu ◽  
Joseph J. Loferski ◽  
Huey-liang Hwang
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Plasma Oxidation ◽  
X Ray ◽  
Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

Effect of Nitridation and Buffer in GaN Films Grown on A-Plane (11-20) Sapphire

1997 ◽  
Vol 482 ◽  
Author(s):  
D. Doppalapudi ◽  
E. Iliopoulos ◽  
S. N. Basu ◽  
T. D. Moustakas
Keyword(s):  
Low Temperature ◽  
Systematic Study ◽  
Optoelectronic Properties ◽  
Pronounced Effect ◽  
Significant Fraction ◽  
Plasma Nitridation ◽  
Zinc Blende ◽  
Photoluminescence Studies ◽  
Structural And Optoelectronic Properties

AbstractIn this paper, we report on a systematic study of GaN growth on the A-plane sapphire by plasma-assisted MBE. The effects of plasma nitridation of the substrate and the growth of a low temperature GaN buffer on the structure and optoelectronic properties of the films are addressed. TEM studies indicate that films grown on substrates which were not nitridated prior to growth have a significant fraction of zinc-blende domains and poor orientational relation with the substrate. On the contrary, nitridation leads to films with superior structural and optoelectronic properties. The low temperature GaN buffer, grown on nitridated substrates, was found to also have a pronounced effect on the optoelectronic properties of the GaN films, especially in those with low carrier concentrations. The correlation between TEM and photoluminescence studies suggest that the transition at 3.27 eV can be attributed to the cubic domains in the films.

Erratum: Enhanced plasma oxidation at low temperature using a thin solid electrolyte film

1981 ◽  
Vol 38 (11) ◽  
pp. 952-952
Author(s):  
S. Gourrier ◽  
P. Dimitriou ◽  
J. B. Theeten ◽  
J. Perrière ◽  
J. Siejka ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solid Electrolyte ◽  
Plasma Oxidation ◽  
Electrolyte Film
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