(Invited) Radiation Effects in AlGaN/GaN and InAlN/GaN High Electron Mobility Transistors

2015 ◽  
Vol 66 (1) ◽  
pp. 3-13 ◽  
Author(s):  
S. J. Pearton ◽  
Y.-H. Hwang ◽  
F. Ren
Keyword(s):  
Electron Mobility ◽  
Radiation Effects ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

The gamma ray radiation effects in high-electron-mobility transistors

1995 ◽  
Vol 10 (11) ◽  
pp. 1445-1451 ◽  
Author(s):  
N Arpatzanis ◽  
M Papastamatiou ◽  
G J Papaioannou ◽  
Z Hatzopoulos ◽  
G Konstandinides
Keyword(s):  
Electron Mobility ◽  
Radiation Effects ◽  
Gamma Ray ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Alpha Particle Radiation Effects in High Electron Mobility Transistors

1996 ◽  
pp. 281-284
Author(s):  
G. J. Papaioannou ◽  
M. J. Papastamatiou ◽  
N. Arpatzanis ◽  
P. Dimitrakis ◽  
C. Michelakis ◽  
...  
Keyword(s):  
Alpha Particle ◽  
Electron Mobility ◽  
Radiation Effects ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Particle Radiation ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Traps and Defects in Pre- and Post-Aged AlGaN-GaN High Electron Mobility Transistors

2013 ◽  
Vol 1526 ◽  
Author(s):  
Yongkun Sin ◽  
Brendan Foran ◽  
Nathan Presser ◽  
Stephen LaLumondiere ◽  
William Lotshaw ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Radiation Effects ◽  
Analytical Techniques ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Satellite Systems ◽  
Electron Mobility Transistors ◽  
Before And After ◽  
Space Environments

ABSTRACTHigh electron mobility transistors (HEMTs) based on AlGaN/GaN hetero-structures are promising for both commercial and military applications that require high power, high voltage, and high temperature operation. Reliability and radiation effects of AlGaN-GaN HEMTs need to be thoroughly studied before they are successfully deployed in potential satellite systems. A few AlGaN HEMT manufacturers have recently reported encouraging reliability, but long-term reliability of these devices under high electric field operation and extreme space environments still remains a major concern. A large number of traps and defects are present in the bulk as well as at the surface, leading to undesirable characteristics including current collapse. The present study is part of our investigation to study traps and defects in the AlGaN HEMT devices using micro-analytical techniques before and after they are life-tested.

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