Manganese Precursor Selection and the Thermal Atomic Layer Deposition of Copper/Manganese Alloy Films

2014 ◽  
Vol 64 (9) ◽  
pp. 147-157 ◽  
Author(s):  
L. C. Kalutarage ◽  
S. B. Clendenning ◽  
C. H. Winter
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Manganese Alloy ◽  
Alloy Films ◽  
Layer Deposition ◽  
Copper Manganese ◽  
Manganese Precursor

Atomic Layer Deposition of Ir−Pt Alloy Films

2010 ◽  
Vol 22 (8) ◽  
pp. 2517-2525 ◽  
Author(s):  
Steven T. Christensen ◽  
Jeffrey W. Elam
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Alloy Films ◽  
Layer Deposition ◽  
Pt Alloy

scholarly journals Noble Metal Alloy Thin Films by Atomic Layer Deposition & Rapid Joule Heating

2021 ◽  
Author(s):  
Yuanyuan Guo ◽  
Yiming Zou ◽  
Chunyu Cheng ◽  
Leyan Wang ◽  
Riko I Made ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Joule Heating ◽  
Atomic Layer ◽  
Metal Alloy ◽  
Dynamics Simulation ◽  
Alloy Films ◽  
X Ray ◽  
Layer Deposition

Abstract Metal alloys are usually fabricated by melting constituent metals together or sintering metal alloy particles made by high energy ball milling (mechanical alloying). All these methods only allow for bulk alloys to be formed. This manuscript details a new method of fabricating Rhodium/Iridium (Rh/Ir) metal alloy films using atomic layer deposition (ALD) and rapid Joule heating induced alloying that gives functional thin film alloys, enabling conformal thin films with high aspect ratios on 3D nanostructured substrate. In this work, ALD was used to deposit Rh thin film on an Al2O3 substrate, followed by an Ir overlayer on top of the Rh film. The multilayered structure was then alloyed / sintered using rapid Joule heating. We can precisely control the thickness of the resultant alloy films down to the atomic scale. The Rh@Ir alloy thin films were characterized using scanning and transmission electron microscopy (SEM/TEM) and energy dispersive spectroscopy (EDS) to study their microstructural characteristics. Grazing-incidence X-ray diffraction (GIXRD) and X-ray photoelectron spectroscopy (XPS) were also carried out to confirm the composition and formation of Rh-Ir thin film alloys. All the characterization results reveal that the Rh-Ir alloy thin film was prepared successfully with one single phase and homogeneous distribution of Rh and Ir throughout the film. Molecular Dynamics simulation experiments of Rh/Ir alloys using Large-Scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) were performed to elucidate the alloying mechanism during the rapid heating process, corroborating the experimental results.

scholarly journals Atomic layer deposition of cubic tin–calcium sulfide alloy films

2019 ◽  
Vol 35 (7) ◽  
pp. 795-803 ◽  
Author(s):  
Chuanxi Yang ◽  
Xizhu Zhao ◽  
Sang Bok Kim ◽  
Laura T. Schelhas ◽  
Xiabing Lou ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Calcium Sulfide ◽  
Alloy Films ◽  
Layer Deposition ◽  
Image Position

Abstract

Physical and Electrical Properties of Al2O3, HfO2, and their Alloy Films Prepared by Atomic Layer Deposition for 65nm CMOS Gate Dielectric

2002 ◽  
Vol 745 ◽  
Author(s):  
Takaaki Kawahara ◽  
Kazuyoshi Torii ◽  
Seiichi Fukuda ◽  
Takeshi Maeda ◽  
Atsushi Horiuchi ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Phase Separation ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Crystallization Temperature ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Dielectric Constants ◽  
Alloy Films ◽  
Layer Deposition

ABSTRACTWe have investigated physical and electrical properties of Al2O3, HfO2, and their alloy films deposited on 300mm Si wafers by Atomic Layer Deposition (ALD). It is found that Al2O3 films are not crystallized even after the heat treatment of 1050°C, while HfO2 films are already crystallized even after a-Si deposition (530°C). The crystallization temperature can be higher by adding Al2O3 to HfO2. It is confirmed by in-plane XRD and plane views of TEM that HfAlOx films with lower Hf content (Hf/(Hf+Al) <30%) are amorphous without phase separation after annealing at 1050°C and 5sec. The dependences of equivalent oxide thicknesses (EOT) on the physical thicknesses of Al2O3, HfAlOx (Hf/(Hf+Al)∼22%), and HfO2 films in poly-silicon gate capacitors indicate that those dielectric constants k are ∼9, 14, and 23, respectively. The gate dielectric with EOT of 1.5nm and the leakage current density Jg of 3mA/cm2 can be fabricated with 2nm-thick HfAlOx (22%) film.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition
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