Effect of Germanium Doping on Thermal Evolution of Neutron Irradiation Induced Defects in Czochralski Si

2013 ◽  
Vol 52 (1) ◽  
pp. 691-696
Author(s):  
B. Dong ◽  
C. Gao ◽  
X. Ma ◽  
D. Yang
Keyword(s):  
Neutron Irradiation ◽  
Thermal Evolution ◽  
Induced Defects ◽  
Irradiation Induced Defects

Neutron irradiation-induced defects in Cd0.9Zn0.1Te:In crystals

2019 ◽  
Vol 100 ◽  
pp. 179-184 ◽  
Author(s):  
Lei Bao ◽  
Gangqiang Zha ◽  
Lingyan Xu ◽  
Binbin Zhang ◽  
Jiangpeng Dong ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Induced Defects ◽  
Irradiation Induced Defects

scholarly journals Thermally stimulated current studies on neutron irradiation induced defects in GaN

2006 ◽  
Vol 88 (13) ◽  
pp. 132109 ◽  
Author(s):  
K. Kuriyama ◽  
M. Ooi ◽  
A. Onoue ◽  
K. Kushida ◽  
M. Okada ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Thermally Stimulated Current ◽  
Induced Defects ◽  
Irradiation Induced Defects

An optical study of the D—D neutron irradiation-induced defects in Co- and Cu-doped ZnO wafers

2013 ◽  
Vol 22 (3) ◽  
pp. 036102 ◽  
Author(s):  
Yun-Bo Wang ◽  
Gong-Ping Li ◽  
Nan-Nan Xu ◽  
Xiao-Dong Pan
Keyword(s):  
Neutron Irradiation ◽  
Optical Study ◽  
Doped Zno ◽  
Induced Defects ◽  
Irradiation Induced Defects

Analysis of recovery process of low-dose neutron irradiation-induced defects in silicon nitride-based ceramics by thermal annealing

2014 ◽  
Vol 455 (1-3) ◽  
pp. 464-469 ◽  
Author(s):  
Areerak Rueanngoen ◽  
Koumei Kanazawa ◽  
Masamitsu Imai ◽  
Katsumi Yoshida ◽  
Toyohiko Yano
Keyword(s):  
Silicon Nitride ◽  
Thermal Annealing ◽  
Neutron Irradiation ◽  
Low Dose ◽  
Recovery Process ◽  
Induced Defects ◽  
Irradiation Induced Defects

scholarly journals M-Center in Neutron Irradiated 4H-SiC

2021 ◽  
Author(s):  
Ivana Capan ◽  
Tomislav Brodar ◽  
Takahiro Makino ◽  
Vladimir Radulovic ◽  
Luka Snoj
Keyword(s):  
Fast Neutron ◽  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Fast Neutron Irradiation ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Metastable Defect

We report on metastable defects introduced in n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation induced defects. In addition to silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep level defects, all arising from the metastable defect, the M-center. The metastable deep level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep level M4, recently observed in ion implanted 4H-SiC, has been additionally confirmed in neutron irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.

Electrical characterization of neutron irradiation induced defects in undoped epitaxially grownn‐GaAs

1993 ◽  
Vol 74 (7) ◽  
pp. 4339-4342 ◽  
Author(s):  
F. D. Auret ◽  
S. A. Goodman ◽  
G. Myburg ◽  
W. O. Barnard ◽  
D. T. L. Jones
Keyword(s):  
Neutron Irradiation ◽  
Electrical Characterization ◽  
Induced Defects ◽  
Irradiation Induced Defects
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