Electrical characterization of neutron irradiation induced defects in undoped epitaxially grownn‐GaAs

1993 ◽  
Vol 74 (7) ◽  
pp. 4339-4342 ◽  
Author(s):  
F. D. Auret ◽  
S. A. Goodman ◽  
G. Myburg ◽  
W. O. Barnard ◽  
D. T. L. Jones
Keyword(s):  
Neutron Irradiation ◽  
Electrical Characterization ◽  
Induced Defects ◽  
Irradiation Induced Defects

Electrical Characterization of Proton Irradiated n-Type ZnO

2006 ◽  
Vol 957 ◽  
Author(s):  
F Danie Auret ◽  
Michael Hayes ◽  
Jackie Nel ◽  
Walter Meyer ◽  
Pieter Johan Janse van Rensburg ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Low Concentrations ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

ABSTRACTRu Schottky barrier diodes (SBD's) were fabricated on the Zn face of n-type ZnO. These diodes were irradiated with 1.8 MeV at fluences ranging from 1 ´ 1013 cm-2 to 2.4 ´ 1014 cm-2. Capacitance and current (I) deep level transient spectroscopy (DLTS) was used to characterise the irradiation induced defects. Capacitance DLTS showed that proton irradiation introduced a level, Ep1, at 0.52 eV below the conduction band at an introduction rate of 13±1 cm-1. A defect with a very similar DLTS signature was also present in low concentrations in unirradiated ZnO. I-DLTS revealed that this proton irradiation introduced a defect with an energy level at (0.036± 0.004) eV below the conduction band. This defect is clearly distinguishable from a defect with a level at (0.033± 0.004) eV below the conduction band that was present in the unirradiated sample. It is speculated that these shallow level defects are related to zinc interstitials or complexes involving them.

Electrical characterization of sputter-deposition-induced defects in epitaxially grown n-GaAs layers

Vacuum ◽  
1995 ◽  
Vol 46 (8-10) ◽  
pp. 1087-1090 ◽  
Author(s):  
F Danie Auret ◽  
SA Goodman ◽  
G Myburg ◽  
WO Barnard
Keyword(s):  
Electrical Characterization ◽  
Sputter Deposition ◽  
Induced Defects

scholarly journals Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon

2019 ◽  
Author(s):  
H. T. Danga ◽  
F. D. Auret ◽  
S. M. Tunhuma ◽  
E. Omotoso ◽  
E. Igumbor ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Characterization ◽  
Type Silicon ◽  
Induced Defects

Neutron irradiation-induced defects in Cd0.9Zn0.1Te:In crystals

2019 ◽  
Vol 100 ◽  
pp. 179-184 ◽  
Author(s):  
Lei Bao ◽  
Gangqiang Zha ◽  
Lingyan Xu ◽  
Binbin Zhang ◽  
Jiangpeng Dong ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Induced Defects ◽  
Irradiation Induced Defects

scholarly journals Thermally stimulated current studies on neutron irradiation induced defects in GaN

2006 ◽  
Vol 88 (13) ◽  
pp. 132109 ◽  
Author(s):  
K. Kuriyama ◽  
M. Ooi ◽  
A. Onoue ◽  
K. Kushida ◽  
M. Okada ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Thermally Stimulated Current ◽  
Induced Defects ◽  
Irradiation Induced Defects
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