Optical Emission Spectroscopy Studies in ECR Plasma Used for the Deposition of Silicon Oxide Film

2013 ◽  
Vol 52 (1) ◽  
pp. 473-481
Author(s):  
Y.-L. Hsieh ◽  
S.-Y. Chang ◽  
T. T. Li ◽  
L.-C. Hu ◽  
C. C. Lee ◽  
...  
Keyword(s):  
Oxide Film ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Silicon Oxide ◽  
Optical Emission ◽  
Silicon Oxide Film ◽  
Ecr Plasma ◽  
Spectroscopy Studies

Behavior of Various Organosilicon Molecules in PECVD Processes for Hydrocarbon-Doped Silicon Oxide Films

2007 ◽  
Vol 124-126 ◽  
pp. 347-350 ◽  
Author(s):  
Yong Sup Yun ◽  
Takanori Yoshida ◽  
Norifumi Shimazu ◽  
Yasushi Inoue ◽  
Nagahiro Saito ◽  
...  
Keyword(s):  
Chemical Bonding ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Deposition Process ◽  
Doped Silicon ◽  
Oxygen Atoms

Plasma diagnosis was performed by means of optical emission spectroscopy in the plasma-enhanced chemical vapor deposition process for preparation of hydrocarbon-doped silicon oxide films. The chemical bonding states were characterized by a fourier-transform infrared spectrometer. Based on the results of the diagnosis in organosilane plasma and the chemical bonding states, a reaction model for the formation process of hydrocarbon-doped silicon oxide films was discussed. From the results of optical emission spectroscopy, we found that the oxygen atoms of methoxy groups in TMMOS molecules can be dissociated easily in the plasma and behave as a kind of oxidizing agent. Siloxane bondings in HMDSO, on the other hand, hardly expel oxygen atoms.

scholarly journals Effect of the O2 dissociation degree on the rate of anodic evaporation of Al in a low-pressure arc

2021 ◽  
Vol 2064 (1) ◽  
pp. 012048
Author(s):  
A S Kamenetskikh ◽  
N V Gavrilov ◽  
S V Krivoshapko ◽  
P V Tretnikov ◽  
A V Chukin
Keyword(s):  
Oxide Film ◽  
Emission Spectroscopy ◽  
Gas Flow ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Low Pressure ◽  
Dissociation Degree ◽  
Accelerated Growth ◽  
Discharge Gap ◽  
O2 Dissociation

Abstract The results of probe diagnostics and optical emission spectroscopy of Ar-O2 plasma of a low-pressure arc generated under anodic evaporation of Al and an increased (0.32 – 0.48) degree of O2 dissociation are presented. It is shown that an increase in the degree of O2 dissociation at a constant gas flow into the discharge gap leads to a significant (more than 1.5 times) decrease in the density of the evaporated atoms flux and a corresponding decrease in the coating deposition rate. The observed effect is due to the accelerated growth of the oxide film on the melt surface, which leads to the limitation of the flow of evaporated Al atoms by the rate of diffusion through the alumina.

Langmuir Probe and Optical Emission Spectroscopy Studies of Low-Pressure Gas Mixture of CO2and N2

2010 ◽  
Vol 12 (3) ◽  
pp. 314-319 ◽  
Author(s):  
E. F Mendez-Martinez ◽  
P. G Reyes ◽  
D Osorio-Gonzalez ◽  
F Castillo ◽  
H Martinez
Keyword(s):  
Langmuir Probe ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Low Pressure ◽  
Gas Mixture ◽  
Spectroscopy Studies

The Effects of the Addition of CF4, Cl2, and N2 TO O2 ECR Plasma on the ETCH Rate, Selectivity and Etched Profile of RuO2 Film

1997 ◽  
Vol 493 ◽  
Author(s):  
Eung-Jik Lee ◽  
Jong-Sam Kim ◽  
Jin-Woong Kim ◽  
Ki-Ho Baik ◽  
Won-Jong Lee
Keyword(s):  
Cyclotron Resonance ◽  
Emission Spectroscopy ◽  
Etch Rate ◽  
Oxygen Radicals ◽  
Optical Emission Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Quadrupole Mass ◽  
Plasma System ◽  
Ecr Plasma

ABSTRACTIn this study, we investigated the effects of the addition of CF4, Cl2, and N2 gases to oxygen electron cyclotron resonance (ECR) plasma on the reactive ion etching (RIE) properties of RuO2 film such as etch rate, selectivity, and etched profile. The concentration of the etching species in the plasma was analyzed with an optical emission spectroscopy (OES) and a quadrupole mass spectrometer (QMS). The etch product was also examined with QMS.The addition of a small amount of CF4, Cl2, or N2 to the O2 plasma increases the concentration of oxygen radicals and accordingly increases the etch rate of the RUO2 films appreciably. The etch rate of the RuO2 film was enhanced more with the addition of a small amount of CF4 and CI2 than with the addition of N2. On the contrary, the etched profile obtained in O2/N2 plasma was superior, without any damaged layer at the sidewall, to O2/CF4 and O2/Cl2 plasma. The selectivity of RuO2 to Si)2 mask was over 20:1 for each of the additive gas proportion at which the etch rate was maximum for each plasma system.

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