Electric Conduction Mechanism of Resistive Switching Memory Fabricated with Anodic Aluminum Oxide

2013 ◽  
Vol 50 (34) ◽  
pp. 49-54 ◽  
Author(s):  
S. Otsuka ◽  
T. Shimizu ◽  
S. Shingubara ◽  
N. Iwata ◽  
T. Watanabe ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Resistive Switching ◽  
Anodic Aluminum Oxide ◽  
Conduction Mechanism ◽  
Electric Conduction ◽  
Resistive Switching Memory ◽  
Anodic Aluminum ◽  
Switching Memory

Transparent resistive switching memory using aluminum oxide on a flexible substrate

2016 ◽  
Vol 27 (7) ◽  
pp. 07LT01 ◽  
Author(s):  
Seung-Won Yeom ◽  
Sang-Chul Shin ◽  
Tan-Young Kim ◽  
Hyeon Jun Ha ◽  
Yun-Hi Lee ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Resistive Switching ◽  
Flexible Substrate ◽  
Resistive Switching Memory ◽  
Switching Memory

Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure

2010 ◽  
Vol 159 ◽  
pp. 333-337 ◽  
Author(s):  
Amit Prakash ◽  
Siddheswar Maikap ◽  
H.Y. Lee ◽  
G. Chen ◽  
F. Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Memory Device ◽  
Data Retention ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Good Memory ◽  
Current Conduction ◽  
Memory Characteristics ◽  
Switching Memory

Resistive switching memory characteristics of high- TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ~500µAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5x103 cycles and good data retention with a stable HRS/LRS.

Effects of electron drag of gold in pores of anodic aluminum oxide: Reversible resistive switching in a chain of point contacts

JETP Letters ◽  
2017 ◽  
Vol 106 (6) ◽  
pp. 411-415 ◽  
Author(s):  
A. S. Vedeneev ◽  
V. V. Rylkov ◽  
K. S. Napolskii ◽  
A. P. Leontiev ◽  
A. A. Klimenko ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Resistive Switching ◽  
Anodic Aluminum Oxide ◽  
Point Contacts ◽  
Anodic Aluminum ◽  
Electron Drag ◽  
A Chain

scholarly journals Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21736-21741 ◽  
Author(s):  
Kyuhyun Park ◽  
Jang-Sik Lee
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Aluminum Oxide Layer ◽  
Switching Memory

Reliable resistive switching memory devices were developed by controlling the oxygen vacancies in aluminum oxide layer during atomic layer deposition and by adopting bilayer structures.

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