Impact of Donor Dopant on Acceptor Solubility in TlBr

2013 ◽  
Vol 50 (12) ◽  
pp. 507-511 ◽  
Author(s):  
S. R. Bishop ◽  
H. L. Tuller
Keyword(s):  
Donor Dopant

Complex Defects In Ci Doped ZnTe And CdTe

1996 ◽  
Vol 442 ◽  
Author(s):  
V. Valdna
Keyword(s):  
Luminescence Spectra ◽  
Donor Dopant ◽  
P Type

AbstractPhotoluminescence and conductivity of doped with chlorine and copper ZnTe, Zn(SeTe) and CdTe are investigated. We suppose that interstitial tellurium and complex defects of Tei with a donor dopant Cl can significantly affect the luminescence spectra and conductivity value of ZnTe and CdTe. This assumption is confirmed experimentally. We found that copper dopant in CdTe: Cl can increase the resistivity value of p-type CdTe.

Germanium as a donor dopant in garnet electrolytes

2019 ◽  
Vol 337 ◽  
pp. 154-160 ◽  
Author(s):  
R.H. Brugge ◽  
J.A. Kilner ◽  
A. Aguadero
Keyword(s):  
Donor Dopant

scholarly journals Synthesis, Crystallization, and Dielectric Behaviour of Lead Bismuth Titanate Borosilicate Glasses with Addition of 1% La2O3

2015 ◽  
Vol 2015 ◽  
pp. 1-10 ◽  
Author(s):  
C. R. Gautam ◽  
Abhishek Madheshiya ◽  
R. K. Dwivedi
Keyword(s):  
Glass Ceramic ◽  
Bismuth Titanate ◽  
Glass System ◽  
Glassy Matrix ◽  
Borosilicate Glasses ◽  
X Ray Diffraction ◽  
Mole Percent ◽  
Ceramic Samples ◽  
Donor Dopant ◽  
Quench Method

Lead bismuth titanate borosilicate glasses were prepared in the glass system 65[(PbxBi1-x)·TiO3]-34[2SiO2·B2O3]-1La2O3 (0.0≤x≤1.0) doped with one mole percent of La2O3 via conventional melt quench method. The amorphous nature of glass samples in this glass system is confirmed by using X-ray diffraction (XRD) study. Differential thermal analysis (DTA) has been employed to determine the glass transition temperature, Tg, as well as crystallization temperature, Tc. DTA measurements were recorded in temperature range from 30 to 1200°C. The prepared glasses were crystallized by regulated controlled heat treatment process on the basis of their DTA results. These samples are carried out for XRD measurements in the 2θ range from 20 to 80° to study the crystallization behaviour and phase formation of the glass ceramic samples. The scanning electron microscopy (SEM) of these glass ceramic samples has been carried out to explore the morphology through nucleation and growth of the crystallites in the glassy matrix. The values of dielectric constant as well as dielectric loss were increased with increasing the temperature within the frequency range from 20 Hz to 100 Hz. The addition of 1 mol% of La2O3 to the lead bismuth titanate glasses enhances the crystallization and acts as donor dopant for this glass system.

Pinched Hysteresis Scaling in Hybrid-Doped BaTiO3

2009 ◽  
Vol 421-422 ◽  
pp. 263-266
Author(s):  
Sukrit Sucharitakul ◽  
Sasiporn Prasertpalichat ◽  
Rattikorn Yimnirun ◽  
Yongyut Laosiritaworn
Keyword(s):  
Exponential Fitting ◽  
Ageing Effect ◽  
Stretched Exponential ◽  
Acceptor Dopant ◽  
Donor Dopant ◽  
Pinched Hysteresis ◽  
Varied Concentration ◽  
Stretched Exponential Decay ◽  
Over Time ◽  
Decay Behavior

In order to investigate the mechanism of hybrid doped ferroelectric, BaTiO3 sample was prepared via conventional mixed-oxide method. The sample was then subjected to doping process with Fe3+ as acceptor dopant and Nb5+ as donor dopant. With varied concentration of acceptor dopant from 0.5 to 1 %M at fixed 1%M of donor, hysteresis property was obtained via Sawyer-Tower circuit. The hysteresis property of the sample was observed to vary over time by influence of ageing effect. By numerical scaling, the stretched exponential decay behavior of the system was obtained to gain the better insight of ageing mechanism of hybrid doped ferroelectric. With stretched exponential fitting, stretching parameter of lower doped Nb5+ were observed lower than that of equivalently doped Nb5+.

Microstructure and Electrical Properties of BaTiO3-Based PTC Ceramics Prepared from Nanopowders

2008 ◽  
Vol 368-372 ◽  
pp. 456-458
Author(s):  
Huan Liu ◽  
Shu Ping Gong ◽  
Dong Xiang Zhou ◽  
Chun Fang Cheng ◽  
Zhi Ping Zheng ◽  
...  
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Curie Temperature ◽  
Hydrothermal Method ◽  
Hydrothermal Treatment ◽  
Theoretical Density ◽  
Ceramic Samples ◽  
Average Grain Size ◽  
Donor Dopant ◽  
Cubic Structure

Dense PTC ceramics were prepared with BaTiO3 nanopowders synthesized by hydrothermal method. BaCO3 and Ti(OC4H9)4 were used as barium and titanium sources, and Y(NO)3·6H2O as the donor dopant respectively. The average grain size of the powders obtained after hydrothermal treatment at 160°C for 9h was about 30nm with cubic structure. Mn(NO3)2 was introduced to the as-prepared nanopowders in order to improve the PTC effect. After sintered at 1280°C, the PTC ceramic samples exhibited sufficient resistance jump ratio(1.086×103) around Curie temperature, the density of which was 5.81g/cm3(96.5% of the theoretical density).

Fluorine as a Donor Dopant in Barium Titanate Ceramics

2003 ◽  
Vol 86 (3) ◽  
pp. 495-500 ◽  
Author(s):  
Darko Makovec ◽  
Miha Drofenik ◽  
Judith Baker
Keyword(s):  
Barium Titanate ◽  
Donor Dopant ◽  
Titanate Ceramics

The Influence of Donor-Doped Content on PTCR Effect of (Ba1-xSmx)TiO3 Based Ceramics Prepared by the Reduction Sintering-Reoxidation Method

2014 ◽  
Vol 1015 ◽  
pp. 517-520
Author(s):  
Xu Xin Cheng ◽  
Zhao Xiong Zhao ◽  
Dong Xiang Zhou ◽  
Qiu Yun Fu
Keyword(s):  
Room Temperature ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Dopant Content ◽  
Reducing Atmosphere ◽  
Donor Dopant ◽  
Ptcr Effect ◽  
Temperature Coefficient Of Resistivity ◽  
Temperature Resistivity

We investigated the effect of the donor-doped content on the positive temperature coefficient of resistivity (PTCR) of (Ba1-xSmx)TiO3(BST) Based Ceramics that were sintered at 1300 °C for 30 min in a reducing atmosphere and re-oxidized at 850 °C for 1 h. The results indicated that the resistance jump first increased and then decreased with an increase of the donor-doped concentration. Moreover, the specimens achieved a low room temperature resistivity of 383.1 Ω·cm at a donor-doped content and exhibited a pronounced PTCR characteristics with a resistance jump of 3.1 orders of magnitude. Furthermore, the RT reisistivity of the samples reduced and increased with the increasing of the donor-dopant content in the range of 0.1−0.5 mol% Sm3+. In addition, the effect of the Sm3+-doped concentration on the grain size of the ceramics was investigated in our paper.

A Novel Low-Temperature-Fired Multifunctional Varistor-Magnetic Ferrite Materials

2012 ◽  
Vol 2012 (CICMT) ◽  
pp. 000641-000649
Author(s):  
Li-Then Mei ◽  
Hsing-I Hsiang ◽  
Hui-Wen Ye
Keyword(s):  
Electron Microscopy ◽  
Low Temperature ◽  
Grain Boundary ◽  
Schottky Barriers ◽  
Energy Dispersion Spectroscopy ◽  
X Ray ◽  
Transmission Electron ◽  
Donor Dopant ◽  
Type Semiconductor ◽  
The Relationship

A novel low temperature-fired (950°C) multifunctional varistor-magnetic ferrite materials can be obtained by adding V2O5 into CuCr0.2Fe1.8O4 ferrites. The relationship between the grain-boundary composition and varistor properties were investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersion spectroscopy (EDS), and X-ray photoelectric spectroscopy (XPS). The addition of V2O5 can effectively reduce the sintering temperature of CuCr0.2Fe1.8O4 ferrites to temperatures of lower than 950°C. Moreover, the V5+ ions occupied the octahedral site of spinel structure and acted as donor dopant, which resulted in the semiconductive grain. The copper-rich observation at the grain boundary based on the TEM and EDS results implied that copper oxide would possibly develop at the grain boundary as the acceptor state, forming double Schottky barriers with the n-type semiconductor grains.

Hafnium Oxide and Hydrogen Co-Doped Indium Oxide Films Deposited by Magnetron Sputtering Technology

2021 ◽  
Vol 1160 ◽  
pp. 51-55
Author(s):  
Cheng Ying Shi ◽  
Guang Hong Wang
Keyword(s):  
Magnetron Sputtering ◽  
Indium Oxide ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Optical And Electrical Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Donor Dopant ◽  
Indium Oxide Film ◽  
Co Doped ◽  
Indium Oxide Films

Hafnium and Hydrogen co-doped indium oxide films (IHFO:H) were prepared by radio frequency magnetron sputtering technology. The effect of hydrogen-donor dopant on the structural, optical and electrical properties of the films was investigated systematically. The resistivity of the IHFO:H film decreased by 2.4×10-4 Ω cm and the mobility improved by 8.2 cm2/Vs compared with Hafnium oxide doped indium oxide film. Employing the IHFO:H film as an electrode for a solar cell can improve efficiency.

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