Ge-on-Si: Single-Crystal Selective Epitaxial Growth in a CVD Reactor

2013 ◽  
Vol 50 (9) ◽  
pp. 507-512 ◽  
Author(s):  
A. Sammak ◽  
W. de Boer ◽  
L. K. Nanver
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Selective Epitaxial Growth

Selective epitaxial growth of single‐crystal anthracene

1977 ◽  
Vol 48 (5) ◽  
pp. 2102-2103 ◽  
Author(s):  
Takashi Ono ◽  
Mitsuteru Kimura ◽  
Toshihiko Miyamoto
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Selective Epitaxial Growth

A Comparison of Arsine and Tertiarybutylarsine as Precursors for the Selective Epitaxial Growth of GaAs and AlGaAs

1990 ◽  
Vol 204 ◽  
Author(s):  
F.T.J. Smith
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Polycrystalline Material ◽  
Low Pressure ◽  
Selective Growth ◽  
Group V ◽  
Selective Epitaxial Growth ◽  
Crystal Material ◽  
Gaas Substrates ◽  
Increasing Temperature

ABSTRACTWe have investigated the use of tertiarybutylarsine (tBAs) as an As source in the surface-selective growth of GaAs and AlGaAs by low-pressure OMVPE. Deposition was carried out onto GaAs substrates partly masked with SiNx. Triethylgallium (TEGa) and trimethylaluminum (TMAl) were used as precursors along with either arsine or tBAs. Growth pressures were in the range 0.3 to 3.0 Torr. The usual trends of decreasing deposition on the mask with increasing temperature, decreasing group V/III ratio, and decreasing pressure were observed. At very low group V/III ratios, for either As precursor, single crystal material with a pitted surface was obtained. A reduction in the nucleation of polycrystalline material on the mask was observed when tBAs was used in place of AsH3.

Thick selective epitaxial growth of silicon at 960°C using silane only

1992 ◽  
Vol 18 (3) ◽  
pp. 237-246 ◽  
Author(s):  
N. Afshar-Hanaii ◽  
J.M. Bonar ◽  
A.G.R. Evans ◽  
G.J. Parker ◽  
C.M.K. Starbuck ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Selective Epitaxial Growth

Oxide Mediated Epitaxial Growth of CoSi2 in a Single Deposition Step

1999 ◽  
Vol 564 ◽  
Author(s):  
S. Ohmi ◽  
R. T. Tung
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Diffusion Barrier ◽  
Blocking Layer ◽  
Deposition Step

AbstractA number of modifications of the oxide-mediated epitaxy (OME) technique are presented which have enabled the growth of thick (∼25–40nm) epitaxial CoSi2 layers in a single deposition sequence. The uses of (a) a thin Ti cap, (b) a thin Ti blocking layer, (c) the codeposition of Co-rich CoSix, and (d) the co-deposition of Col−xTix. have all been shown to lead to improved epitaxial quality over the pure Co OME process, for Co thickness greater than 6nm. Essentially uniform, single crystal silicide layers of over 25nm have been grown in a single deposition step. These results are supportive of the proposed role of a diffusion barrier/kinetics retarder on the part of the interlayer in the OME and the Ti-interlayer mediated epitaxy processes.

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