The Effects of Composition and Design of Experiment on the Quality of Al-Ge Eutectic Bonding for Wafer Level Packaging

2013 ◽  
Vol 50 (7) ◽  
pp. 151-158 ◽  
Author(s):  
X.-H. Huang ◽  
C.-W. Cheng ◽  
P.-Y. Liu ◽  
Y.-C. Hsieh ◽  
L.-L. Chao ◽  
...  
Keyword(s):  
Design Of Experiment ◽  
Wafer Level ◽  
Eutectic Bonding ◽  
Wafer Level Packaging

Application of Au-Sn eutectic bonding in hermetic radio-frequency microelectromechanical system wafer level packaging

2006 ◽  
Vol 35 (3) ◽  
pp. 425-432 ◽  
Author(s):  
Qian Wang ◽  
Sung-Hoon Choa ◽  
Woonbae Kim ◽  
Junsik Hwang ◽  
Sukjin Ham ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Wafer Level ◽  
Eutectic Bonding ◽  
Microelectromechanical System ◽  
Wafer Level Packaging

Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding

2006 ◽  
pp. 609-612
Author(s):  
Qian Wang ◽  
Sung Hoon Choa ◽  
Woon Bae Kim ◽  
Jun Sik Hwang ◽  
Suk Jin Ham ◽  
...  
Keyword(s):  
Rf Mems ◽  
Wafer Level ◽  
Eutectic Bonding ◽  
Wafer Level Packaging

Study on the Gold-Gold Thermocompression Bonding for Wafer-Level Packaging

2009 ◽  
Vol 60-61 ◽  
pp. 325-329 ◽  
Author(s):  
Jing Wu ◽  
Shi Xing Jia ◽  
Yun Xiang Wang ◽  
Jian Zhu
Keyword(s):  
Metal Film ◽  
Wafer Level ◽  
Eutectic Bonding ◽  
Wafer Level Packaging ◽  
Film Adhesive ◽  
Thermocompression Bonding

The study is performed to implement the Gold-Gold thermocompression bonding for the wafer-level packaging of MEMS chips. Numerous experimental attempts have been carried out to select the metal film adhesive to avoid the Au-Si melt together and optimize bonding processes to intensify the Au-Au eutectic bonding. Finally the results display that the eutectic bonding of the gold-gold are arrived as electrical as well as mechanical interconnection of the MEMS structure and as seal as well as bonding intension.

Wafer Level Bonding for LED Packaging Using Six Sigma Methodology

2007 ◽  
Vol 124-126 ◽  
pp. 519-522 ◽  
Author(s):  
Ji Hyun Park ◽  
Sung Jun Lee ◽  
Seog Moon Choi
Keyword(s):  
Shear Strength ◽  
Six Sigma ◽  
Wafer Level ◽  
Eutectic Bonding ◽  
Sigma Level ◽  
Wafer Level Packaging ◽  
Electrical Interconnection ◽  
Mems Technology ◽  
Six Sigma Methodology ◽  
Packaging Cost

As Recently, wafer level packaging (WLP) received lots of attention in system because it shows the potential to reduce packaging cost, while the yield of devices after dicing and packaging can be increased. In this study, we newly proposed WLP for light emitted diodes (LED) using MEMS technology. Our silicon package structure is composed of base and reflector cup. The role of base is that settle LED chip at desired position and supply electrical interconnection for LED operation. Reflector cup was formed by an-isotropic wet etching. Package platform could be fabricated by eutectic bonding between base and reflector cup using AuSn. We carried out process using six sigma methodology. We first decided 2 factors and 3 levels by design of experiment (DOE). One factor is the kind of metal model. The other is the shape of pattern. It was used that three-kind metal models are Au (cup), AuSn (cup), and AuSn (base). The bonding strength is measured using a die shear strength tester. It carried out in the repetition experiment by a unit of 3 times. As a result of this test, the AuSn(base) metal model and the No.3 pattern were applied by the optimal condition. We set the value of the low limit at shear strength 950g/mm2 for applying sigma level. This value is a generally used for eutectic bonding packages. The experiment results have 3.13 sigma level (95% yield). In this paper, We show the final LED package which is finished up to LED attach, wire bonding, encapsulation, etc. This wafer level bonding process demonstrates its promising potential at the wafer level packaging in LED packaging.

Dicing Laminated Wafer for QFN 3D Stacked Die Packaging

2007 ◽  
Vol 31 ◽  
pp. 202-205
Author(s):  
Shahrum Abdullah ◽  
Z. Endut ◽  
I. Ahmad ◽  
Azman Jalar ◽  
Suhaila M. Yusof
Keyword(s):  
Polymeric Material ◽  
Blade Surface ◽  
Wafer Level ◽  
Process Step ◽  
Wafer Level Packaging ◽  
Die Attach ◽  
Before And After ◽  
Qualitative Measure ◽  
Blade Cutting

Nowadays, die attach film (DAF) gaining popularity in microelectronic packaging as integral part in facilitating the growth of wafer level packaging and stacked die packaging. DAF applied to the backside of wafers prior to saw have many advantages, such as the elimination of the epoxy dispensed process step and the reduction of epoxy related failure mode. However, the dicing process for DAF wafer usually associated with sidewall chipping, DAF whiskering and crack that will affect reliability of Quad Flat Non-Leaded (QFN) stacked die. Blade properties and characteristics are the crucial factor in analyzing the DAF dicing results. In this paper, we evaluate the blade characteristics before and after DAF wafer dicing process for our stacked die packaging. The qualitative measure by means of the Scanning Electron Microscope (SEM) and Energy Dispersive X-Ray (EDX) analysis were performed in order to understand the lamination and dulling effect on blade surface. The obtained results showed that sawing polymeric material such as wafer laminated with DAF induces lamination of polymeric material onto the blade surface and reduce blade cutting edge. As a result, reduce the quality of DAF dicing process.

Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding

2006 ◽  
Vol 326-328 ◽  
pp. 609-612
Author(s):  
Qian Wang ◽  
Sung Hoon Choa ◽  
Woon Bae Kim ◽  
Jun Sik Hwang ◽  
Suk Jin Ham ◽  
...  
Keyword(s):  
Shear Strength ◽  
Low Temperature ◽  
Insertion Loss ◽  
Rf Mems ◽  
Wafer Level ◽  
Eutectic Bonding ◽  
Wafer Level Packaging ◽  
Hermetic Sealing ◽  
Multilayer Metallization

In this paper, a low temperature hermetic wafer level packaging scheme for the RFMEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 %m in width is performed. The size of the MEMS package is 1mm × 1mm × 700 %m. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.

Effect of Process Variables on Glass Frit Wafer Bonding in MEMS Wafer Level Packaging

2008 ◽  
Vol 1139 ◽  
Author(s):  
Sid Sridharan ◽  
Jim Henry ◽  
John Maloney ◽  
Bob Gardner ◽  
Keith Mason ◽  
...  
Keyword(s):  
Processing Parameters ◽  
Glass Frit ◽  
Acoustic Microscopy ◽  
Process Variables ◽  
Wafer Level ◽  
Cross Sectional ◽  
Screening Design ◽  
Wafer Level Packaging ◽  
Volume Production

AbstractAmong different MEMS wafer level bonding processes glass frit bonding provides reliable vacuum tight seals in volume production. The quality of the seal is a function of both seal glass materials and the processing parameters used in glass frit bonding. Therefore, in this study Taguchi L18 screening Design of Experiment (DOE) was used to study the effect of materials and process variables on the quality of the glass seal in 6” silicon wafers bonded in EVG520IS bonder. Six bonding process variables at three levels and two types of sealing glass pastes were considered. The seals were characterized by Scanning Acoustic Microscopy (SAM), cross sectional Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Analysis (EDAX). The results were quantified into four responses for DOE analysis. Key results are a) peak temperature has the strongest influence on seal properties, b) hot melt paste has significantly lower defects compared to liquid paste, and c) peak firing temperatures can be as low as 400°C under certain conditions.

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