Necessity of Epitaxial Growth of  -FeSi2 Thin Films in Formation of n-Type  -FeSi2/p-Type Si Heterojunction Photodiodes

2013 ◽  
Vol 50 (6) ◽  
pp. 157-162
Author(s):  
R. Iwasaki ◽  
N. Promros ◽  
K. Yamashita ◽  
S. Izumi ◽  
S. Funasaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
P Type

Epitaxial growth of transparent p-type conducting CuGaO[sub 2] thin films on sapphire (001) substrates by pulsed laser deposition

2001 ◽  
Vol 89 (3) ◽  
pp. 1790 ◽  
Author(s):  
K. Ueda ◽  
T. Hase ◽  
H. Yanagi ◽  
H. Kawazoe ◽  
H. Hosono ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
P Type

Influences of hydrogen passivation on NIR photodetection of n-type β-FeSi2/p-type Si heterojunction photodiodes fabricated by facing-targets direct-current sputtering

2012 ◽  
Vol 1396 ◽  
Author(s):  
Kyohei Yamashita ◽  
Nathaporn Promros ◽  
Ryūhei Iwasaki ◽  
Shota Izumi ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Direct Current ◽  
The Other ◽  
Initial Growth ◽  
Hydrogen Passivation ◽  
Dangling Bonds ◽  
Capacitance Density ◽  
P Type ◽  
Direct Current Sputtering

ABSTRACTHydrogen passivation was applied to the initial epitaxial growth of n-type β-FeSi2 thin films on p-type Si(111) substrates by facing-targets direct-current sputtering (FTDCS) in order to reduced the formation of interface states and terminate dangling bonds in the β-FeSi2 films, and the passivation effects were studied on basis of the electrical evaluation results of the formed n-type β-FeSi2/p-type Si heterojunction photodiodes. The initial growth was made at different gas inflow H2/Ar ratios ranging from 0 to 0.2. The photodetection performance of the photodiode fabricated at the ratio of 0.2 was markedly improved as compared to those of the other samples. The quantum efficiency and detectivity were 2.08 % and 1.75 × 1010 cm√Hz/W, respectively. The sample exhibited the minimum junction capacitance density of 9.2 nF/cm2. The enhanced photodetective performance should be mainly because dangling bonds that act as trap centers for photocarriers are effectively inactivated by the passivation.

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type

scholarly journals Epitaxial growth and characterization of Cu thin films deposited on Al2O3(0001) substrates by magnetron sputtering

2021 ◽  
pp. 130119
Author(s):  
Ik-Jae Lee ◽  
Hee Seob Kim ◽  
Young Duck Yun ◽  
Seen-Woong Kang ◽  
Hyo-Yun Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Epitaxial Growth

scholarly journals Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO3 Transparent Thin Films

2021 ◽  
Author(s):  
Dong Han ◽  
Rahma Moalla ◽  
Ignasi Fina ◽  
Valentina M. Giordano ◽  
Marc d’Esperonnat ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Epitaxial Strain ◽  
P Type

Solution-phase p-type doping of highly enriched semiconducting single-walled carbon nanotubes for thermoelectric thin films

2021 ◽  
Vol 119 (2) ◽  
pp. 023302
Author(s):  
Noah J. Stanton ◽  
Rachelle Ihly ◽  
Brenna Norton-Baker ◽  
Andrew J. Ferguson ◽  
Jeffrey L. Blackburn
Keyword(s):  
Thin Films ◽  
Carbon Nanotubes ◽  
Single Walled Carbon Nanotubes ◽  
Solution Phase ◽  
Single Walled Carbon ◽  
Thermoelectric Thin Films ◽  
P Type ◽  
Walled Carbon Nanotubes

Fabrication of high hole-carrier density p-type ZnO thin films by N–Al co-doping

2007 ◽  
Vol 253 (8) ◽  
pp. 3825-3827 ◽  
Author(s):  
Zhang Xiaodan ◽  
Fan Hongbing ◽  
Zhao Ying ◽  
Sun Jian ◽  
Wei Changchun ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Density ◽  
Zno Thin Films ◽  
Co Doping ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document