Epitaxial growth of transparent p-type conducting CuGaO[sub 2] thin films on sapphire (001) substrates by pulsed laser deposition

2001 ◽  
Vol 89 (3) ◽  
pp. 1790 ◽  
Author(s):  
K. Ueda ◽  
T. Hase ◽  
H. Yanagi ◽  
H. Kawazoe ◽  
H. Hosono ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
P Type

Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

2003 ◽  
Vol 83 (26) ◽  
pp. 5500-5502 ◽  
Author(s):  
J.-R. Duclère ◽  
M. Guilloux-Viry ◽  
V. Bouquet ◽  
A. Perrin ◽  
E. Cattan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition

Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition

2002 ◽  
Vol 420-421 ◽  
pp. 107-111 ◽  
Author(s):  
H Kim ◽  
J.S Horwitz ◽  
S.B Qadri ◽  
D.B Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

scholarly journals Study of structural, optical and electrical properties of thin Ag2Cu2O4 films prepared by pulsed laser deposition

2019 ◽  
Vol 15 (34) ◽  
pp. 41-54
Author(s):  
Iqbal S. Naji
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sintering Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Positive Sign ◽  
Glass Substrates ◽  
Atomic Force ◽  
Structural Surface ◽  
P Type

The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has obtained for film sintered at 600 °C. The optical band gap was increase from 1.6 eV to 1.65 eV when sintering temperature increased to 300 °C and decrease to 1.45 eV at 600 °C for the films deposited at room temperature. Heat treatment of films has been increased the energy band with increasing sintering temperature. Hall coefficient of Ag2Cu2O4 films have a positive sign which means the charge carrier is a p-type. The electrical conductivity decreases with increasing of the sintering temperature for as deposited and annealed films.

Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition

1995 ◽  
Vol 77 (9) ◽  
pp. 4724-4728 ◽  
Author(s):  
R. D. Vispute ◽  
J. Narayan ◽  
Hong Wu ◽  
K. Jagannadham
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Hrtem Observation ◽  
Device Applications ◽  
Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

P-Type II-VI Compound Semiconductor Thin Films Grown by Pulsed Laser Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
W. P. Shen ◽  
H. S. Kwok
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Type Ii ◽  
New Approach ◽  
Li Doping ◽  
Semiconductor Thin Films ◽  
In Doping ◽  
P Type

AbstractIn this paper the results on p-type ZnS, ZnSe, CdS and CdSe thin films grown by pulsed laser deposition will be discussed. these films were deposited on GaAs substrates. Li-doping has been shown to be effective in producing p-type II-VI thin films, while in-doping is excellent for n-type CdS and CdSe thin films. No post-annealing process was used. these preliminary results suggest a possible new approach through pulsed laser deposition to solve the doping problem of II-VI compound semiconductors.

scholarly journals Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

2020 ◽  
Vol 31 (16) ◽  
pp. 165704 ◽  
Author(s):  
Yekai Song ◽  
Zhuojun Li ◽  
Hui Li ◽  
Shujie Tang ◽  
Gang Mu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

Direct-epitaxial growth of SrAl2O4:Eu,Dy thin films on Al2O3 substrate by pulsed laser deposition

2019 ◽  
Vol 491 ◽  
pp. 53-59
Author(s):  
Huan Ma ◽  
Tornike Gagnidze ◽  
Bernhard Walfort ◽  
Marta D. Rossell ◽  
Claudia Cancellieri ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Al2o3 Substrate
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