scholarly journals Large Scale Single-Crystal Cu(In,Ga)Se2 Nanotip Arrays for High Efficiency Solar Cell

2013 ◽  
Vol 50 (6) ◽  
pp. 33-39
Author(s):  
Y.-L. Chueh
Author(s):  
Yi-Chung Wang ◽  
Yu-Ting Yen ◽  
Chin-Hung Liu ◽  
Chia-Hsiang Chen ◽  
Wei-Chen Kuo ◽  
...  

Nano Letters ◽  
2011 ◽  
Vol 11 (10) ◽  
pp. 4443-4448 ◽  
Author(s):  
Chin-Hung Liu ◽  
Chia-Hsiang Chen ◽  
Szu-Ying Chen ◽  
Yu-Ting Yen ◽  
Wei-Chen Kuo ◽  
...  

2020 ◽  
Vol 18 (1) ◽  
pp. 287-294
Author(s):  
Harsasi Setyawati ◽  
Handoko Darmokoesoemo ◽  
Irmina Kris Murwani ◽  
Ahmadi Jaya Permana ◽  
Faidur Rochman

AbstractThe demands of ecofriendly technologies to produce a reliable supply of renewable energy on a large scale remains a challenge. A solar cell based on DSSC (Dye-Sensitized Solar Cell) technology is environmentally friendly and holds the promise of a high efficiency in converting sunlight into electricity. This manuscript describes the development of a light harvester system as a main part of a DSSC. Congo red dye has been functionalized with metals (Fe, Co, Ni), forming a series of complexes that serve as a novel light harvester on the solar cell. Metal-congo red complexes have been characterized by UV-VIS and FTIR spectroscopy, and elemental analyses. The performance of metal complexes in capturing photons from sunlight has been investigated in a solar cell device. The incorporation of metals to congo red successfully improved of the congo red efficiency as follows: Fe(II)-congo red, Co(II)-congo red and Ni(II)-congo red had efficiencies of 8.17%, 6.13% and 2.65%, respectively. This research also discusses the effect of metal ions on the ability of congo red to capture energy from sunlight.


1998 ◽  
Vol 4 (S2) ◽  
pp. 626-627
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson

The growth of high quality GaAs layers on single crystal Ge substrates has attracted a great deal of interest in recent years. Currently under development at NREL is the GaAs/GalnP-on-Ge high efficiency multi-junction solar cell. Unlike other heteroepitaxial systems such as GaAs-on-Si, physical properties such as the lattice parameter and thermal expansion coefficient of the Ge and GaAs are much closer. Further, Ge has a bandgap of 0.7 eV that makes it a suitable bottom cell in a multi-junction stack. However, the growth of GaAs on Ge is not a straightforward process, and little is known about the Ge surface and the nucleation of GaAs on Ge in the MOCVD environment. In this study, TEM results show that a number microstructural defects are associated with the Ge/GaAs interface and the initial stages of growth.


RSC Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 1314 ◽  
Author(s):  
Szu-Ying Chen ◽  
Yu-Ting Yen ◽  
Yi-Yang Chen ◽  
Chain-Shu Hsu ◽  
Yu-Lun Chueh ◽  
...  

2013 ◽  
Vol 546 ◽  
pp. 347-352 ◽  
Author(s):  
Yi-Chung Wang ◽  
Yu-Ting Yen ◽  
Chin-Hung Liu ◽  
Chia-Hsiang Chen ◽  
Wei-Chen Kuo ◽  
...  

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