A high efficiency single‐crystal CdSe photoelectrochemical solar cell and an associated loss mechanism

1982 ◽  
Vol 40 (3) ◽  
pp. 275-277 ◽  
Author(s):  
Karl W. Frese
1998 ◽  
Vol 4 (S2) ◽  
pp. 626-627
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson

The growth of high quality GaAs layers on single crystal Ge substrates has attracted a great deal of interest in recent years. Currently under development at NREL is the GaAs/GalnP-on-Ge high efficiency multi-junction solar cell. Unlike other heteroepitaxial systems such as GaAs-on-Si, physical properties such as the lattice parameter and thermal expansion coefficient of the Ge and GaAs are much closer. Further, Ge has a bandgap of 0.7 eV that makes it a suitable bottom cell in a multi-junction stack. However, the growth of GaAs on Ge is not a straightforward process, and little is known about the Ge surface and the nucleation of GaAs on Ge in the MOCVD environment. In this study, TEM results show that a number microstructural defects are associated with the Ge/GaAs interface and the initial stages of growth.


2013 ◽  
Vol 108 ◽  
pp. 337-342 ◽  
Author(s):  
Zhang Lan ◽  
Xiaoping Zhang ◽  
Jihuai Wu ◽  
Jianming Lin ◽  
Miaoliang Huang ◽  
...  

Author(s):  
Yi-Chung Wang ◽  
Yu-Ting Yen ◽  
Chin-Hung Liu ◽  
Chia-Hsiang Chen ◽  
Wei-Chen Kuo ◽  
...  

Nano Letters ◽  
2011 ◽  
Vol 11 (10) ◽  
pp. 4443-4448 ◽  
Author(s):  
Chin-Hung Liu ◽  
Chia-Hsiang Chen ◽  
Szu-Ying Chen ◽  
Yu-Ting Yen ◽  
Wei-Chen Kuo ◽  
...  

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