Fin Width and Gate Length Dependences of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs

2013 ◽  
Vol 50 (5) ◽  
pp. 237-248 ◽  
Author(s):  
E. Zhang ◽  
D. M. Fleetwood ◽  
G. X. Duan ◽  
C. X. Zhang ◽  
R. D. Schrimpf ◽  
...  
Keyword(s):  
Floating Body ◽  
Gate Length ◽  
Charge Pumping

Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs

2008 ◽  
Vol 600-603 ◽  
pp. 747-750 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki
Keyword(s):  
Gate Length ◽  
Fall Time ◽  
Charge Pumping

This paper describes the influence of the geometric component in the charge-pumping measurement of 4H-SiC MOSFETs. Charge-pumping measurements were conducted on 4H-SiC MOSFETs with and without NO annealing. Charge-pumping measurements with different pulse-fall times revealed that the geometric component exists in 4H-SiC MOSFETs and is especially large in the unannealed MOSFETs. A sufficiently long fall-time is needed to minimize its effect, which is expected to be 1–10 μs for 4H-SiC MOSFETs with a gate length of 10 μm.

Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs

2012 ◽  
Vol 59 (6) ◽  
pp. 3062-3068 ◽  
Author(s):  
E. X. Zhang ◽  
D. M. Fleetwood ◽  
G. X. Duan ◽  
C. X. Zhang ◽  
S. A. Francis ◽  
...  
Keyword(s):  
Trap Density ◽  
Floating Body ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Charge Pumping ◽  
Radiation Induced

Optically Assisted Charge Pumping on Floating-Body FETs

2010 ◽  
Vol 31 (12) ◽  
pp. 1365-1367 ◽  
Author(s):  
Sungho Kim ◽  
Sung-Jin Choi ◽  
Yang-Kyu Choi
Keyword(s):  
Floating Body ◽  
Charge Pumping

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

OPTIMISATION OF SAND CASTING PROCESS FOR IMPELLER USING TAGUCHI METHODOLOGY

2020 ◽  
Vol XVII (2) ◽  
pp. 23-33
Author(s):  
Faisal Hafeez ◽  
Salman Hussain ◽  
Wasim Ahmad ◽  
Mirza Jahanzaib
Keyword(s):  
Surface Roughness ◽  
Surface Defects ◽  
A356 Alloy ◽  
Casting Process ◽  
Sand Casting ◽  
Gate Length ◽  
Taguchi Methodology ◽  
Confirmatory Tests ◽  
Binder Ratio ◽  
Response Measures

This paper presents the study to investigate the effects of binder ratio, in-gate length and pouring height on hardness, surface roughness and casting defects of sand casting process. Taguchi methodology with L9 orthogonal array was employed to design the experimentation. Sand casting of six blade impeller using A356 alloy was performed and empirical models for all the above response measures were formulated. Confirmatory tests and analysis of variance results confirmed the accuracy of the model. Binder ratio was found to be the most significant parameter affecting casting surface defects and surface roughness. This was followed by pouring height and in-gate length.

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