GaN-Based Wide-Bandgap Power Switching Devices: From Atoms to the Grid

2013 ◽  
Vol 50 (3) ◽  
pp. 199-209
Author(s):  
S. Atcitty ◽  
R. Kaplar ◽  
S. DasGupta ◽  
M. Marinella ◽  
A. Armstrong ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Power Switching ◽  
Switching Devices

Recent Advances in Wide Bandgap Power Switching Devices

2013 ◽  
Vol 50 (3) ◽  
pp. 179-188 ◽  
Author(s):  
K. Sheng ◽  
Q. Guo
Keyword(s):  
Wide Bandgap ◽  
Power Switching ◽  
Recent Advances ◽  
Switching Devices

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

2008 ◽  
Vol 600-603 ◽  
pp. 77-82 ◽  
Author(s):  
Albert A. Burk ◽  
Michael J. O'Loughlin ◽  
Joseph J. Sumakeris ◽  
C. Hallin ◽  
Elif Berkman ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
High Throughput ◽  
Low Cost ◽  
Wide Bandgap ◽  
High Quality ◽  
Power Switching ◽  
Recent Emergence ◽  
Switching Devices

The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost high-quality 100-mm diameter epitaxial SiC wafers is enabling the economical production of advanced wide-bandgap Power–Switching devices.

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