Feature Size Control in IC Manufacturing

1982 ◽  
Vol 26 (5) ◽  
pp. 561-567 ◽  
Author(s):  
P. Frasch ◽  
K. H. Saremski
Keyword(s):  
Size Control ◽  
Feature Size ◽  
Ic Manufacturing ◽  
Feature Size Control

Shape and Feature Size Control of Colloidal Crystal-Based Patterns Using Stretched Polydimethylsiloxane Replica Molds

Langmuir ◽  
2009 ◽  
Vol 25 (20) ◽  
pp. 12011-12014 ◽  
Author(s):  
Hong Kyoon Choi ◽  
Sang Hyuk Im ◽  
O Ok Park
Keyword(s):  
Colloidal Crystal ◽  
Size Control ◽  
Feature Size ◽  
Feature Size Control

Block copolymer lithography: Feature size control and extension by an over-etch technique

2012 ◽  
Vol 522 ◽  
pp. 318-323 ◽  
Author(s):  
Sozaraj Rasappa ◽  
Dipu Borah ◽  
Ramsankar Senthamaraikannan ◽  
Colm C. Faulkner ◽  
Matthew T. Shaw ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Size Control ◽  
Feature Size ◽  
Block Copolymer Lithography ◽  
Feature Size Control ◽  
Copolymer Lithography

Simultaneous Removal of Particles from Front and Back Sides by a Single Wafer Backside Megasonic System

2012 ◽  
Vol 187 ◽  
pp. 167-170 ◽  
Author(s):  
Chan Geun Park ◽  
Hong Seong Sohn
Keyword(s):  
Surface Topography ◽  
Process Window ◽  
Simultaneous Removal ◽  
Particle Removal ◽  
Back Side ◽  
Front Side ◽  
Depth Of Focus ◽  
Feature Size ◽  
Ic Manufacturing ◽  
Focus Spot

In IC manufacturing, particle removal from a wafer's back side (BS) has become as important as that from the front side (FS). For example, during lithography, BS particles can cause a variation on the topside surface topography. This may result in a focus-spot failure due to the reduced process window for depth of focus (DOF) as shown in Fig. 1. This problem increases as the feature size decreases. BS particles may cause other problems in wet benches, where BS particles can be transferred to the adjacent front side of wafers. Fig. 2 shows these FS particles, which usually appear as flow or streak patterns on the wafer [.

Interfacial studies in Nb3Sn superconductors

1991 ◽  
Vol 49 ◽  
pp. 590-591
Author(s):  
Ernest L. Hall ◽  
Lee E. Rumaner ◽  
Mark G. Benz
Keyword(s):  
Grain Size ◽  
Grain Boundaries ◽  
Flux Pinning ◽  
Size Control ◽  
High Magnetic Fields ◽  
Type Ii ◽  
Reaction Interface ◽  
Liquid Diffusion ◽  
Type Ii Superconductor ◽  
Grain Size Control

The intermetallic compound Nb3Sn is a type-II superconductor of interest because it has high values of critical current density Jc in high magnetic fields. One method of forming this compound involves diffusion of Sn into Nb foil containing small amounts of Zr and O. In order to maintain high values of Jc, it is important to keep the grain size in the Nb3Sn as small as possible, since the grain boundaries act as flux-pinning sites. It has been known for many years that Zr and O were essential to grain size control in this process. In previous work, we have shown that (a) the Sn is transported to the Nb3Sn/Nb interface by liquid diffusion along grain boundaries; (b) the Zr and O form small ZrO2 particles in the Nb3Sn grains; and (c) many very small Nb3Sn grains nucleate from a single Nb grain at the reaction interface. In this paper we report the results of detailed studies of the Nb3Sn/Nb3Sn, Nb3Sn/Nb, and Nb3Sn/ZrO2 interfaces.

Size Control of Block Polymer Templated Mesoporous Silicate Materials

2000 ◽  
Vol 628 ◽  
Author(s):  
Takeo Yamada ◽  
Keisuke Asai ◽  
Kenkichi Ishigure ◽  
Akira Endo ◽  
Hao S. Zhou ◽  
...  
Keyword(s):  
Mesoporous Materials ◽  
Molecular Sieve ◽  
Mesoporous Material ◽  
Triblock Copolymer ◽  
Size Control ◽  
Block Polymer ◽  
New Class ◽  
Mesoporous Silicate ◽  
Cubic Structure ◽  
Silicate Materials

ABSTRACTMesoporous materials have attracted considerable interest because of applications in molecular sieve, catalyst, and adsorbent. It will be useful for new functional device if functional molecules can be incorporated into the pore of mesoporous material. However, it is necessary to synthesize new mesoporous materials with controlled large pore size. Recently, new class of mesoporous materials has been prepared using triblock copolymer as a template. In this paper, we reported that hexagonal and cubic structure silicate mesoporous materials can be synthesized through triblock copolymer templating, and their size was controlled by synthesis condition at condensation.

A Step Size Control Method Improving Estimation Speed in Double Talk Term

2013 ◽  
Vol E96.A (7) ◽  
pp. 1543-1551 ◽  
Author(s):  
Takuto YOSHIOKA ◽  
Kana YAMASAKI ◽  
Takuya SAWADA ◽  
Kensaku FUJII ◽  
Mitsuji MUNEYASU ◽  
...  
Keyword(s):  
Control Method ◽  
Size Control ◽  
Step Size ◽  
Step Size Control

Application of EDS Technique for OSP Film Thickness Measurement

2006 ◽  
Author(s):  
Prong Kongsubto ◽  
Sirarat Kongwudthiti
Keyword(s):  
Thin Film ◽  
Quantitative Analysis ◽  
Joint Strength ◽  
Critical Factor ◽  
Thickness Measurement ◽  
Ic Manufacturing ◽  
And Control ◽  
Film Thickness Measurement ◽  
Non Destructive

Abstract Organic solderability preservatives (OSPs) pad is one of the pad finishing technologies where Cu pad is coated with a thin film of an organic material to protect Cu from oxidation during storage and many processes in IC manufacturing. Thickness of OSP film is a critical factor that we have to consider and control in order to achieve desirable joint strength. Until now, no non-destructive technique has been proposed to measure OSP thickness on substrate. This paper reports about the development of EDS technique for estimating OSP thickness, starting with determination of the EDS parameter followed by establishing the correlation between C/Cu ratio and OSP thickness and, finally, evaluating the accuracy of the EDS technique for OSP thickness measurement. EDS quantitative analysis was proved that it can be utilized for OSP thickness estimation.

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