Violatility analysis framework for product lines

2001 ◽  
Author(s):  
Juha Savolainen ◽  
Juha Kuusela
Keyword(s):  
Analysis Framework ◽  
Product Lines

Violatility analysis framework for product lines

2001 ◽  
Vol 26 (3) ◽  
pp. 133-141 ◽  
Author(s):  
Juha Savolainen ◽  
Juha Kuusela
Keyword(s):  
Analysis Framework ◽  
Product Lines

Transmission Electron Microscopy and Scanning Capacitance Microscopy Analysis of Dislocation-Induced Leakages in n-channel I/O Transistors

2005 ◽  
Author(s):  
M.L. Anderson ◽  
P. Tangyunyong ◽  
T.A. Hill ◽  
C.Y. Nakakura ◽  
T.J. Headley ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
New Product Development ◽  
Yield Enhancement ◽  
Product Development Process ◽  
Product Lines ◽  
Scanning Capacitance Microscopy ◽  
Transmission Electron ◽  
Complementary Techniques ◽  
Analytical Tools

Abstract By combining transmission electron microscopy (TEM) [1] with scanning capacitance microscopy (SCM) [2], it is possible to enhance our understanding of device failures. At Sandia, these complementary techniques have been utilized for failure analysis in new product development, process validation, and yield enhancement, providing unique information that cannot be obtained with other analytical tools. We have previously used these instruments to identify the root causes of several yield-limiting defects in CMOS device product lines [3]. In this paper, we describe in detail the use of these techniques to identify electrically active silicon dislocations in failed SRAMs and to study the underlying leakage mechanisms associated with these defects.

Delivering Savings with Open Architecture and Product Lines

2011 ◽  
Author(s):  
Brian Womble ◽  
William Schmidt ◽  
Mike Arendt ◽  
Tim Fain
Keyword(s):  
Open Architecture ◽  
Product Lines
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