Hardware Trojan Attack in Embedded Memory

Xinmu Wang; Tamzidul Hoque; Abhishek Basak; Robert Karam; Wei Hu; Maoyuan Qin; Dejun Mu; Swarup Bhunia

doi:10.1145/3422353

Hardware Trojan Attack in Embedded Memory

ACM Journal on Emerging Technologies in Computing Systems ◽

10.1145/3422353 ◽

2021 ◽

Vol 17 (1) ◽

pp. 1-28

Author(s):

Xinmu Wang ◽

Tamzidul Hoque ◽

Abhishek Basak ◽

Robert Karam ◽

Wei Hu ◽

...

Keyword(s):

Hardware Trojan ◽

Embedded Memory

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Hardware Trojan attacks in embedded memory

2018 IEEE 36th VLSI Test Symposium (VTS) ◽

10.1109/vts.2018.8368630 ◽

2018 ◽

Cited By ~ 10

Author(s):

Tamzidul Hoque ◽

Xinmu Wang ◽

Abhishek Basak ◽

Robert Karam ◽

Swarup Bhunia

Keyword(s):

Hardware Trojan ◽

Embedded Memory

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Quantification of Power Based Hardware Trojan Detection Under Realistic Variations and Separation of Power Supplies

2019 11th International Conference on Electrical and Electronics Engineering (ELECO) ◽

10.23919/eleco47770.2019.8990399 ◽

2019 ◽

Author(s):

Mehmet Kocabas ◽

Alp Arslan Bayrakci

Keyword(s):

Power Supplies ◽

Hardware Trojan ◽

Hardware Trojan Detection ◽

Trojan Detection

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Dual Port RAM MBIST Failure Analysis Using Time Resolved Dynamic Laser Stimulation

ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2008p0188 ◽

2008 ◽

Author(s):

Jonathan Shaw ◽

Christopher McMahon ◽

Yin Shyang Ng ◽

Félix Beaudoi

Keyword(s):

Failure Analysis ◽

Embedded Memory ◽

Complementary Information ◽

Time Resolved ◽

Laser Stimulation ◽

Specific Indication ◽

Read Operation ◽

Site Localization

Abstract This paper presents the use of Dynamic Laser Stimulation (DLS) and Time-Resolved DLS (TR-DLS) to provide fail site localization and complementary information on a failed embedded memory IC. In this study, an embedded dual port RAM within a 90nm IC that failed one of the Memory Built-In Self Tests (MBISTs) was investigated. This technique rapidly localized the failing area within the memory read/write circuitry. The TR-DLS provided maps for each operation of the MBIST pattern. With this information, the failure was clearly identified as a read operation failure. The TR-DLS technique also provided much refined site signature (down to just one net) within the sense amp of the Port B of the dual port RAM. This information provided very specific indication on how to improve the operation of that particular sense amp circuitry within the dual port RAM Memory.

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