scholarly journals Design and Analysis of STTRAM-Based Ternary Content Addressable Memory Cell

2017 ◽  
Vol 13 (4) ◽  
pp. 1-22 ◽  
Author(s):  
Rekha Govindaraj ◽  
Swaroop Ghosh
Keyword(s):  
Memory Cell ◽  
Content Addressable Memory ◽  
Ternary Content Addressable Memory

Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices

2009 ◽  
Vol 2 ◽  
pp. 023004 ◽  
Author(s):  
Shoun Matsunaga ◽  
Kimiyuki Hiyama ◽  
Atsushi Matsumoto ◽  
Shoji Ikeda ◽  
Haruhiro Hasegawa ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Memory Cell ◽  
Content Addressable Memory ◽  
Cell Chip ◽  
Ternary Content Addressable Memory ◽  
Standby Power

True Three-Valued Ternary Content Addressable Memory Cell Based On Ambipolar Carbon Nanotube Transistors

2019 ◽  
Vol 28 (05) ◽  
pp. 1950085
Author(s):  
Daniel Hellkamp ◽  
Kundan Nepal
Keyword(s):  
Carbon Nanotube ◽  
Memory Cell ◽  
Spice Simulation ◽  
Content Addressable Memory ◽  
Ternary Content Addressable Memory ◽  
Traditional Design ◽  
Ambipolar Behavior ◽  
Cell Stability ◽  
Effect Transistor ◽  
Nanotube Transistors

Carbon nanotube-based transistors (CNTFETs) have been shown to exhibit ambipolar field-effect transistor behavior, allowing circuit designers to easily choose between [Formula: see text]- and [Formula: see text]-conduction channels by applying correct voltages at a polarity gate. In this paper, we explore this ambipolar behavior of the CNTFET to design both binary and ternary content addressable memory (AM) cells. Using SPICE simulation, we show the designs of a traditional ternary CAM (TCAM) and a true three-valued TCAM (T3-CAM) functionality of the proposed cells and show that the ambipolar design can lead to a savings of up to 31% in terms of transistor count over a traditional design. We also explore issues related to matchline leakage, cell stability and design in the presence of metallic tubes.

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