scholarly journals Electronic Structure of Liquid Metals in the Tight-Binding Approximation. I

1973 ◽  
Vol 49 (3) ◽  
pp. 731-753 ◽  
Author(s):  
Yoshiaki Ishida ◽  
Fumiko Yonezawa
Keyword(s):  
Electronic Structure ◽  
Liquid Metals ◽  
Tight Binding ◽  
Tight Binding Approximation ◽  
Structure Of Liquid

Luminescent Amorphous Silicon Layers

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Crystalline Silicon ◽  
Tight Binding ◽  
Blue Shift ◽  
Localized States ◽  
Structure Model ◽  
Radiative Recombination Rate ◽  
Tight Binding Approximation

AbstractThe electronic structure of amorphous silicon layers has been calculated within the empirical tight binding approximation using the Wooten-Winer-Weaire atomic structure model. We predict an important blue shift due to the confinement for layer thickness below 3 nm and we compare with crystalline silicon layers. The radiative recombination rate is enhanced by the disorder and the confinement but remains quite small. The comparison of our results with experimental results shows that the density of defects and localized states in the studied samples must be quite small.

Local Electronic Structure and Short-Range Order in a Computer Simulated Amorphous Metal

1991 ◽  
Vol 02 (01) ◽  
pp. 232-237 ◽  
Author(s):  
A.Ya. BELENKII ◽  
M.A. FRADKIN
Keyword(s):  
Electronic Structure ◽  
Short Range ◽  
Short Range Order ◽  
Local Density ◽  
Tight Binding ◽  
Amorphous Metal ◽  
Range Order ◽  
Tight Binding Approximation ◽  
Electronic Parameters ◽  
Local Electronic Structure

The relationship between topological short-range order and a local electronic structure was analyzed in the computer model of an amorphous metal. The model, obtained by means of the original self-consistent cluster simulation procedure was studied with the use of Voronoi tesselation, the distribution of the atomic level stresses and the icosahedral order parameters. It was found that a marked correlation exists within 2 atomic parameter groups, one of which corresponds to the local dilatation and the other to the spherical symmetry distortion. The local density of electronic d-states (DOS) and the distribution of the electronic parameters was analyzed. The local electronic structure, calculated within the tight-binding approximation, appears to depend on the local atomic order by two-fold means: the interatomic distances decrease leads to the increase of the local bandwidth, and the icosahedral configuration distortion reduces the DOS at the Fermi level. The study of the local configurations stability shows, that the most stable configurations are the slightly distorted icosahedra.

Tight-binding calculations of electronic structure and resistivity of liquid and amorphous metals

1997 ◽  
Vol 491 ◽  
Author(s):  
S. K. Bose
Keyword(s):  
Electronic Structure ◽  
Transition Metals ◽  
Linear Combination ◽  
Tight Binding ◽  
Amorphous Metals ◽  
Recursion Method ◽  
Sources Of Error ◽  
Pseudopotential Approach ◽  
Structure Of Liquid

ABSTRACTWe discuss various aspects of calculating the electronic structure of liquid and amorphous metals using the recursion method and the tight-binding linear muffin-tin orbitals (TB-LMTO) basis. Resistivity calculations for such systems based on the Kubo-Greenwood formula and the TB-LMTO-recursion method are presented and compared with similar calculations based on the linear combination of atomic and atomic-like orbitals (LCAO) and the chemical pseudopotential approach. Results for amorphous Fe and Co and liquid Hg, Pd, and some 3d transition metals are presented. Sources of error in the calculation and ways to improve upon the present calculations are discussed.

Electronic Structure of Amorphous Silicon

1997 ◽  
Vol 491 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon ◽  
Tight Binding ◽  
Localized States ◽  
Band Offset ◽  
Valence Band Offset ◽  
Tight Binding Approximation ◽  
Exponential Tails ◽  
Si Model ◽  
Hydrogenated Amorphous

ABSTRACTThe electronic structure of a continuous network model of tetrahedrally bonded amorphous silicon (a-Si) and of a model hydrogenated amorphous silicon (a-Si:H) that we have built from the a-Si model are calculated in the tight binding approximation. The band edges near the gap are characterized by exponential tails of localized states induced mainly by the variations in bond angles. The spatial localization of the states is compared between a-Si and a-Si:H. Valence band offset between the amorphous and the crystalline phases is calculated.

Sign in / Sign up

Export Citation Format

Share Document