Freezing of Interstitial-Type Dislocation Loops Grown as Vacancy Sources in Nearly Perfect Aluminum Crystals

1995 ◽  
Vol 64 (3) ◽  
pp. 699-701 ◽  
Author(s):  
Kaoru Mizuno ◽  
Kotaro Ono ◽  
Kazuyoshi Ito ◽  
Takao Kino
Keyword(s):  
Dislocation Loops ◽  
Type Dislocation

The behavior of vacancy-type dislocation loops under electron irradiation in iron

2014 ◽  
Vol 455 (1-3) ◽  
pp. 253-257 ◽  
Author(s):  
Farong Wan ◽  
Qian Zhan ◽  
Yi Long ◽  
Shanwu Yang ◽  
Gaowei Zhang ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Dislocation Loops ◽  
Type Dislocation

scholarly journals In-situ study of one-dimensional motion of interstitial-type dislocation loops in hydrogen-ion-implanted aluminum

2022 ◽  
Vol 71 (1) ◽  
pp. 016102-016102
Author(s):  
Li Ran-Ran ◽  
◽  
Zhang Yi-Fan ◽  
Yin Yu-Peng ◽  
Watanabe Hideo ◽  
...  
Keyword(s):  
Hydrogen Ion ◽  
Dislocation Loops ◽  
One Dimensional ◽  
Type Dislocation ◽  
Ion Implanted

Nucleation and Growth of Voids in Silicon

1997 ◽  
Vol 490 ◽  
Author(s):  
P. S. Plekhanov ◽  
U. M. Gösele ◽  
T. Y. Tan
Keyword(s):  
Void Growth ◽  
Homogeneous Nucleation ◽  
Nucleation And Growth ◽  
Vacancy Formation ◽  
Limited Time ◽  
Dislocation Loops ◽  
Nucleation Barrier ◽  
Different Temperatures ◽  
Type Dislocation ◽  
Growth Of Voids

ABSTRACTNucleation of voids and vacancy-type dislocation loops in Si under vacancy supersaturation conditions has been considered. Based upon nucleation barrier calculations, it has been found that voids can be nucleated, but not dislocation loops. The homogeneous nucleation rate of voids has been calculated for different temperatures by assuming different enthalpy values of Si vacancy formation. The process of void growth due to precipitation of vacancies has been numerically simulated. Comparing results of the nucleation and the growth modeling and taking into account the competition between the two processes, the limited time available, and the crystal cooling rate after growth, it has been shown that homogeneous nucleation of voids to experimentally observed densities and void growth to observed sizes is possible if enthalpy of Si vacancy formation is within the range of 2.9 to 3.6 eV with the nucleation temperature in the range of 980–1080 °C.

scholarly journals Formation of Vacancy-Type Dislocation Loops in Hydrogen-Ion-Implanted Fe–Cr Alloy

2018 ◽  
Vol 32 (5) ◽  
pp. 566-572
Author(s):  
Yu-Feng Du ◽  
Li-Juan Cui ◽  
Wen-Tuo Han ◽  
Fa-Rong Wan
Keyword(s):  
Hydrogen Ion ◽  
Dislocation Loops ◽  
Type Dislocation ◽  
Ion Implanted

Ostwald ripening of interstitial-type dislocation loops in 4H-silicon carbide

2006 ◽  
Vol 100 (5) ◽  
pp. 053521 ◽  
Author(s):  
P. O. Å. Persson ◽  
L. Hultman ◽  
M. S. Janson ◽  
A. Hallén
Keyword(s):  
Silicon Carbide ◽  
Ostwald Ripening ◽  
Dislocation Loops ◽  
Type Dislocation

New Type Dislocation Loops in Quenched Aluminum

1963 ◽  
Vol 18 (11) ◽  
pp. 1590-1593 ◽  
Author(s):  
Sho Yoshida ◽  
Yoshihara Shimomura
Keyword(s):  
Dislocation Loops ◽  
New Type ◽  
Type Dislocation

Defect Formation During Zn Diffusion into GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
Martina Luysberg ◽  
W. Jäger ◽  
K. Urban ◽  
M. Perret ◽  
N.A. Stolwijk ◽  
...  
Keyword(s):  
Defect Formation ◽  
Analytical Electron Microscopy ◽  
Surface Region ◽  
Dislocation Loops ◽  
Diffusion Front ◽  
Near Surface ◽  
Zn Diffusion ◽  
Zn Concentration ◽  
Analytical Electron ◽  
Type Dislocation

AbstractThe microstructure induced by the Zn diffusion at 1170 K into doped and undoped semi-insulating GaAs single crystals was characterized for various diffusion times t < 1740 min by analytical electron microscopy. The results were compared with Zn concentration profiles obtained by spreading resistance measurements (SRM) on the same samples. At the diffusion front the formation of prismatic interstitial dislocation loops, dislocation networks, and of cavities partly filled with Ga was observed. Closer to the surface facetted voids and, for the undoped samples, vacancy-type dislocation loops formed. The near surface region of highest Zn-concentration showed a high density of Zn-rich precipitates. A model is presented which accounts .for these observations. It is based on fast interstitial Zn diffusion and the kick-out mechanism for interstitial-substituional exchange.

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