Identification of interstitial‐ and vacancy‐type dislocation loops in ion‐implanted silicon

1974 ◽  
Vol 45 (3) ◽  
pp. 1085-1090 ◽  
Author(s):  
Wei‐Kuo Wu ◽  
Jack Washburn
Keyword(s):  
Dislocation Loops ◽  
Type Dislocation ◽  
Ion Implanted

scholarly journals In-situ study of one-dimensional motion of interstitial-type dislocation loops in hydrogen-ion-implanted aluminum

2022 ◽  
Vol 71 (1) ◽  
pp. 016102-016102
Author(s):  
Li Ran-Ran ◽  
◽  
Zhang Yi-Fan ◽  
Yin Yu-Peng ◽  
Watanabe Hideo ◽  
...  
Keyword(s):  
Hydrogen Ion ◽  
Dislocation Loops ◽  
One Dimensional ◽  
Type Dislocation ◽  
Ion Implanted

scholarly journals Formation of Vacancy-Type Dislocation Loops in Hydrogen-Ion-Implanted Fe–Cr Alloy

2018 ◽  
Vol 32 (5) ◽  
pp. 566-572
Author(s):  
Yu-Feng Du ◽  
Li-Juan Cui ◽  
Wen-Tuo Han ◽  
Fa-Rong Wan
Keyword(s):  
Hydrogen Ion ◽  
Dislocation Loops ◽  
Type Dislocation ◽  
Ion Implanted

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

The behavior of vacancy-type dislocation loops under electron irradiation in iron

2014 ◽  
Vol 455 (1-3) ◽  
pp. 253-257 ◽  
Author(s):  
Farong Wan ◽  
Qian Zhan ◽  
Yi Long ◽  
Shanwu Yang ◽  
Gaowei Zhang ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Dislocation Loops ◽  
Type Dislocation

Freezing of Interstitial-Type Dislocation Loops Grown as Vacancy Sources in Nearly Perfect Aluminum Crystals

1995 ◽  
Vol 64 (3) ◽  
pp. 699-701 ◽  
Author(s):  
Kaoru Mizuno ◽  
Kotaro Ono ◽  
Kazuyoshi Ito ◽  
Takao Kino
Keyword(s):  
Dislocation Loops ◽  
Type Dislocation

Nucleation and Growth of Voids in Silicon

1997 ◽  
Vol 490 ◽  
Author(s):  
P. S. Plekhanov ◽  
U. M. Gösele ◽  
T. Y. Tan
Keyword(s):  
Void Growth ◽  
Homogeneous Nucleation ◽  
Nucleation And Growth ◽  
Vacancy Formation ◽  
Limited Time ◽  
Dislocation Loops ◽  
Nucleation Barrier ◽  
Different Temperatures ◽  
Type Dislocation ◽  
Growth Of Voids

ABSTRACTNucleation of voids and vacancy-type dislocation loops in Si under vacancy supersaturation conditions has been considered. Based upon nucleation barrier calculations, it has been found that voids can be nucleated, but not dislocation loops. The homogeneous nucleation rate of voids has been calculated for different temperatures by assuming different enthalpy values of Si vacancy formation. The process of void growth due to precipitation of vacancies has been numerically simulated. Comparing results of the nucleation and the growth modeling and taking into account the competition between the two processes, the limited time available, and the crystal cooling rate after growth, it has been shown that homogeneous nucleation of voids to experimentally observed densities and void growth to observed sizes is possible if enthalpy of Si vacancy formation is within the range of 2.9 to 3.6 eV with the nucleation temperature in the range of 980–1080 °C.

Ostwald ripening of interstitial-type dislocation loops in 4H-silicon carbide

2006 ◽  
Vol 100 (5) ◽  
pp. 053521 ◽  
Author(s):  
P. O. Å. Persson ◽  
L. Hultman ◽  
M. S. Janson ◽  
A. Hallén
Keyword(s):  
Silicon Carbide ◽  
Ostwald Ripening ◽  
Dislocation Loops ◽  
Type Dislocation
Sign in / Sign up

Export Citation Format

Share Document