Stable Distribution Analysis of Internal Field Distribution in Ternary Alloy Spin Glass Systems, Au(CrFe)

1993 ◽  
Vol 62 (1) ◽  
pp. 321-326 ◽  
Author(s):  
Yutaka Nakai ◽  
Yukito Furukawa
Keyword(s):  
Spin Glass ◽  
Field Distribution ◽  
Ternary Alloy ◽  
Stable Distribution ◽  
Internal Field ◽  
Distribution Analysis

Electric field distribution and voltage breakdown modeling for any PN junction

2016 ◽  
Vol 35 (1) ◽  
pp. 137-156 ◽  
Author(s):  
N. Rouger
Keyword(s):  
Numerical Methods ◽  
Electric Field ◽  
Field Distribution ◽  
Electric Field Distribution ◽  
Poisson’S Equation ◽  
Doping Profile ◽  
Distribution Analysis ◽  
Poisson's Equation ◽  
Content Type ◽  
Pn Junction

Purpose – Scientists and engineers have been solving Poisson’s equation in PN junctions following two approaches: analytical solving or numerical methods. Although several efforts have been accomplished to offer accurate and fast analyses of the electric field distribution as a function of voltage bias and doping profiles, so far none achieved an analytic or semi-analytic solution to describe neither a double diffused PN junction nor a general case for any doping profile. The paper aims to discuss these issues. Design/methodology/approach – In this work, a double Gaussian doping distribution is first considered. However, such a doping profile leads to an implicit problem where Poisson’s equation cannot be solved analytically. A method is introduced and successfully applied, and compared to a finite element analysis. The approach is then generalized, where any doping profile can be considered. 2D and 3D extensions are also presented, when symmetries occur for the doping profile. Findings – These results and the approach here presented offer an efficient and accurate alternative to numerical methods for the modeling and simulation of mathematical equations arising in physics of semiconductor devices. Research limitations/implications – A general 3D extension in the case where no symmetry exists can be considered for further developments. Practical implications – The paper strongly simplify and ease the optimization and design of any PN junction. Originality/value – This paper provides a novel method for electric field distribution analysis.

Electric Field Distribution Analysis of ±1000kV DC Wall Bushing during Polarity Reversal

2012 ◽  
Vol 229-231 ◽  
pp. 807-810
Author(s):  
Li Zhang ◽  
Qing Min Li ◽  
Li Na Zhang ◽  
Yu Di Cong
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Potential Distribution ◽  
Electric Field Distribution ◽  
Polarity Reversal ◽  
Distribution Analysis ◽  
The Finite Element Method ◽  
Insulation System ◽  
The Moment ◽  
Short Time

±1000kV DC wall bushing under planning is a complex insulation system which bears the effects imposed by different working conditions. The electric field distribution is concentrated at the bushing outlet terminal, which might result in breakdown discharge especially when short-time abrupt conditions such as polarity reversal occur. In this paper, the finite element method is utilized to analyze electric field distribution and potential distribution of wall bushing during polarity reversal. Electric field distribution and potential distribution at the moment of polarity reversal are obtained, which provides value reference for the study of polarity reversal process.

Internal field distribution of a radially inhomogeneous droplet illuminated by an arbitrary shaped beam

2018 ◽  
Vol 210 ◽  
pp. 19-34 ◽  
Author(s):  
Jia Jie Wang ◽  
Thomas Wriedt ◽  
Yi Ping Han ◽  
Lutz Mädler ◽  
Yong Chang Jiao
Keyword(s):  
Field Distribution ◽  
Internal Field ◽  
Shaped Beam ◽  
Radially Inhomogeneous
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