Suppression of Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors

Ke Mao; Tomoko Mizutani; Anil Kumar; Takuya Saraya; Toshiro Hiramoto

doi:10.1143/jjap.51.02bc06

Suppression of Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc06 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC06 ◽

Cited By ~ 4

Author(s):

Ke Mao ◽

Tomoko Mizutani ◽

Anil Kumar ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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A Reliable Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) Based on Radio-Frequency Analysis

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.9884 ◽

2014 ◽

Vol 14 (11) ◽

pp. 8219-8224

Author(s):

Jae Hwa Seo ◽

Young Jun Yoon ◽

Hwan Gi Lee ◽

Gwan Min Yoo ◽

Eou-Sik Cho ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Frequency Analysis ◽

Extraction Method ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Fabrication of Highly Scaled Silicon Nanowire Gate-All-Around Metal–Oxide–Semiconductor Field Effect Transistors by Using Self-Aligned Local-Channel V-gate by Optical Lithography Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.084203 ◽

2010 ◽

Vol 49 (8) ◽

pp. 084203 ◽

Cited By ~ 5

Author(s):

Jae Hyun Park ◽

Jae Young Song ◽

Jong Pil Kim ◽

Sang Wan Kim ◽

Jang-Gn Yun ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Optical Lithography ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lithography Process

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Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2840187 ◽

2008 ◽

Vol 92 (5) ◽

pp. 052102 ◽

Cited By ~ 64

Author(s):

K. H. Cho ◽

K. H. Yeo ◽

Y. Y. Yeoh ◽

S. D. Suk ◽

M. Li ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Device and Circuit Codesign Strategy for Application to Low-Noise Amplifier Based on Silicon Nanowire Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dn03 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DN03 ◽

Cited By ~ 1

Author(s):

Seongjae Cho ◽

Hee-Sauk Jhon ◽

Jung Hoon Lee ◽

Se Hwan Park ◽

Hyungcheol Shin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Low Noise ◽

Metal Oxide Semiconductor ◽

Low Noise Amplifier ◽

Oxide Semiconductor ◽

Noise Amplifier

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Monolithic Integration of a Silicon Nanowire Field-Effect Transistors Array on a Complementary Metal-Oxide Semiconductor Chip for Biochemical Sensor Applications

Analytical Chemistry ◽

10.1021/acs.analchem.5b02604 ◽

2015 ◽

Vol 87 (19) ◽

pp. 9982-9990 ◽

Cited By ~ 24

Author(s):

Paolo Livi ◽

Moria Kwiat ◽

Amir Shadmani ◽

Alexander Pevzner ◽

Giulio Navarra ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Monolithic Integration ◽

Oxide Semiconductor ◽

Sensor Applications ◽

Semiconductor Chip

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Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis

Journal of Applied Physics ◽

10.1063/1.3592252 ◽

2011 ◽

Vol 109 (11) ◽

pp. 113712 ◽

Cited By ~ 7

Author(s):

Yeonghun Lee ◽

Kuniyuki Kakushima ◽

Kenji Natori ◽

Hiroshi Iwai

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mobility Analysis ◽

Limited Mobility ◽

Spatially Resolved ◽

Corner Effects

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Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc14 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC14

Author(s):

Kyung Rok Kim ◽

Sunhae Shin ◽

Seongjae Cho ◽

Jung-Hee Lee ◽

In Man Kang

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Frequency Analysis ◽

Extraction Method ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dc06 ◽

2012 ◽

Vol 51 ◽

pp. 04DC06

Author(s):

Wei Feng ◽

Ranga Hettiarachchi ◽

Soshi Sato ◽

Kuniyuki Kakushima ◽

Masaaki Niwa ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab5b7c ◽

2020 ◽

Vol 59 (SG) ◽

pp. SGGA02 ◽

Cited By ~ 2

Author(s):

Sekhar Reddy Kola ◽

Yiming Li ◽

Narasimhulu Thoti

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

P Type

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Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.3277 ◽

2008 ◽

Vol 47 (4) ◽

pp. 3277-3281 ◽

Cited By ~ 4

Author(s):

Eu Jin Tan ◽

Kin Leong Pey ◽

Navab Singh ◽

Dong-Zhi Chi ◽

Guo-Qiang Lo ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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