Thickness Dependence of the Domain Width in Thin Crystals of BaFe12O19and SrFe12O19

1966 ◽  
Vol 5 (2) ◽  
pp. 117-127 ◽  
Author(s):  
Kimiyoshi Gotō
Keyword(s):  
Thickness Dependence ◽  
Domain Width

FILM THICKNESS DEPENDENCE OF HEAT TRANSMISSION INTO HELIUM

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-825-C6-827
Author(s):  
P. Taborek ◽  
M. Sinvani ◽  
M. Weimer ◽  
D. Goodstein
Keyword(s):  
Film Thickness ◽  
Thickness Dependence ◽  
Heat Transmission

THICKNESS DEPENDENCE OF CATHODOLUMINESCENCE IN THIN FILMS

1989 ◽  
Vol 50 (C6) ◽  
pp. C6-177-C6-177
Author(s):  
J. YUAN ◽  
S. BERGER ◽  
L. M. BROWN
Keyword(s):  
Thin Films ◽  
Thickness Dependence

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Thickness dependence of the conductivity in P.C.B. liquid crystal

1978 ◽  
Vol 13 (9) ◽  
pp. 427-431
Author(s):  
E. Bodegom ◽  
R. Coelho ◽  
T.J. Gallagher
Keyword(s):  
Liquid Crystal ◽  
Thickness Dependence

Peculiarities of the thickness dependence of the superconducting properties of thin Nb films

2004 ◽  
Vol 408-410 ◽  
pp. 700-702 ◽  
Author(s):  
K.S. Ilin ◽  
S.A. Vitusevich ◽  
B.B. Jin ◽  
A.I. Gubin ◽  
N. Klein ◽  
...  
Keyword(s):  
Thickness Dependence ◽  
Superconducting Properties
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