Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing

2010 ◽  
Vol 49 (8) ◽  
pp. 080205 ◽  
Author(s):  
Koji Araki ◽  
Haruo Sudo ◽  
Tatsuhiko Aoki ◽  
Takeshi Senda ◽  
Hiromichi Isogai ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Thermal Strain ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Nitrogen Doped ◽  
Oxygen Precipitation ◽  
Effect Of Oxygen

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Silicon Nitride Films ◽  
Oxygen Precipitation ◽  
Different Temperatures ◽  
Nitrogen Bonds ◽  
Sinx Film

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.

Enhanced Internal Gettering of Iron in n/n+ Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient

2015 ◽  
Vol 242 ◽  
pp. 218-223
Author(s):  
Peng Dong ◽  
Xing Bo Liang ◽  
Da Xi Tian ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
Silicon Wafer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Enhancement Effect ◽  
Epitaxial Silicon ◽  
High Concentration ◽  
Oxygen Precipitation ◽  
Doped Silicon ◽  
The One

We report a strategy feasible for improving the internal gettering (IG) capability of iron (Fe) for n/n+ epitaxial silicon wafers using the heavily arsenic (As)-doped Czochralski (CZ) silicon wafers as the substrates. The n/n+ epitaxial silicon wafers were subjected to the two-step anneal of 650 °C/16 h + 1000 °C/16 h following the rapid thermal processing (RTP) at 1250 °C in argon (Ar) or nitrogen (N2) atmosphere. It is found that the prior RTP in N2 atmosphere exhibits much stronger enhancement effect on oxygen precipitation (OP) in the substrates than that in Ar atmosphere, thereby leading to a better IG capability of Fe contamination on the epitaxial wafer. In comparison with the RTP in Ar atmosphere, the one in N2 atmosphere injects not only vacancies but also nitrogen atoms of high concentration into the heavily As-doped silicon substrate. The co-action of vacancy and nitrogen leads to the enhanced OP in the substrate and therefore the better IG capability for the n/n+ epitaxial silicon wafer.

Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers

2008 ◽  
Vol 573-574 ◽  
pp. 45-60 ◽  
Author(s):  
Robert J. Falster ◽  
Vladimir V. Voronkov
Keyword(s):  
Thermal Processing ◽  
Critical Role ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Intrinsic Point Defect ◽  
Defect Engineering ◽  
Materials Engineering ◽  
Oxygen Precipitation ◽  
Precipitation Behaviour ◽  
Oxygen Precipitates

The use of Rapid Thermal Processing to install lattice vacancy profiles into silicon wafers for the purpose of forming a template for the nucleation and ideal control of oxygen precipitation has become an important materials engineering tool for the microelectronics industry. This paper reviews the principles of the technique and the precise materials/defect engineering that it engenders. It furthermore discusses what has been learned regarding the elusive properties of the intrinsic point defects in silicon through studies of the distributions of vacancies created by use of the technique. Also discussed are recent discoveries about the critical role of the other intrinsic point defect, the self-interstitial and the development of oxygen precipitates and their distributions post-nucleation and the critical importance of what has become to be called the “ninja transformation” in the switching-on of gettering efficiency of oxygen precipitate systems.

Oxygen Precipitation within Denuded Zone Founded by Rapid Thermal Processing in Czochralski Silicon Wafers

2005 ◽  
Vol 22 (9) ◽  
pp. 2407-2410 ◽  
Author(s):  
Cui Can ◽  
Yang De-Ren ◽  
Ma Xiang-Yang ◽  
Fu Li-Ming ◽  
Fan Rui-Xin ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Rapid thermal processing of silicon wafers with emissivity patterns

2006 ◽  
Vol 35 (5) ◽  
pp. 877-891 ◽  
Author(s):  
M. Rabus ◽  
A. T. Fiory ◽  
N. M. Ravindra ◽  
P. Frisella ◽  
A. Agarwal ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers

scholarly journals Simulation of silicon wafers heating during rapid thermal processing using “UBTO 1801” unit

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (7) ◽  
pp. 79-86
Author(s):  
J. A. Solovjov ◽  
V. A. Pilipenko ◽  
V. P. Yakovlev
Keyword(s):  
Mathematical Model ◽  
Silicon Wafer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Light Flux ◽  
Silicon Wafers ◽  
Wafer Surface ◽  
Constant Density ◽  
Wafer Temperature

The present work is devoted to determination of the dependence of the heating temperature of the silicon wafer on the lamps power and the heating time during rapid thermal processing using “UBTO 1801” unit by irradiating the wafer backside with an incoherent flow of constant density light. As a result, a mathematical model of silicon wafer temperature variation was developed on the basis of the equation of nonstationary thermal conductivity and known temperature dependencies of the thermophysical properties of silicon and the emissivity of aluminum and silver applied to the planar surface of the silicon wafer. For experimental determination of the numerical parameters of the mathematical model, silicon wafers were heated with light single pulse of constant power to the temperature of one of three phase transitions such as aluminum-silicon eutectic formation, aluminum melting and silver melting. The time of phase transition formation on the wafer surface during rapid thermal processing was fixed by pyrometric method. In accordance with the developed mathematical model, we determined the conversion coefficient of the lamps electric power to the light flux power density with the numerical value of 5.16∙10-3 cm-2 . Increasing the lamps power from 690 to 2740 W leads to an increase in the silicon wafer temperature during rapid thermal processing from 550°to 930°K, respectively. With that, the wafer temperature prediction error in compliance with developed mathematical model makes less than 2.3 %. The work results can be used when developing new procedures of rapid thermal processing for silicon wafers.

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