Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors

2010 ◽  
Vol 49 (2) ◽  
pp. 021005 ◽  
Author(s):  
David F. Brown ◽  
Stacia Keller ◽  
Umesh K. Mishra
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Etch Stop

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

2007 ◽  
Vol 91 (23) ◽  
pp. 232103 ◽  
Author(s):  
Man Hoi Wong ◽  
Yi Pei ◽  
Tomás Palacios ◽  
Likun Shen ◽  
Arpan Chakraborty ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors

2009 ◽  
Vol 48 (11) ◽  
pp. 111003
Author(s):  
Chung Yu Lu ◽  
Oliver Hilt ◽  
Richard Lossy ◽  
Nidhi Chaturvedi ◽  
Wilfred John ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Cap Layer

Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

2016 ◽  
Vol 55 (4) ◽  
pp. 040306 ◽  
Author(s):  
Yusuke Takei ◽  
Kazuo Tsutsui ◽  
Wataru Saito ◽  
Kuniyuki Kakushima ◽  
Hitoshi Wakabayashi ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Algan Layer ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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