Cu2ZnSnS4Thin Films Annealed in H2S Atmosphere for Solar Cell Absorber Prepared by Pulsed Laser Deposition

2008 ◽  
Vol 47 (1) ◽  
pp. 602-604 ◽  
Author(s):  
Katsuhiko Moriya ◽  
Kunihiko Tanaka ◽  
Hisao Uchiki
Author(s):  
Mohammed T. Hussein ◽  
Mohammed Jawad H. Kadhim

Hybrid bilayer heterojunction Zinc Phthalocyanine (ZnPc) thin-film P-type is considered as a donor active layer as well as the Zinc Oxide (ZnO) thin film n-type is considered as an acceptor with (Electron Transport Layer). In this study, using the technique of Q-switching Nd-YAG Pulsed Laser Deposition (PLD) under vacuum condition 10-3 torr on two ITO (Indium Tin Oxide) and (AL) electrodes and aluminum, is used to construct the hydride bilayer photovoltaic solar cell heterojunction (PVSC). The electrical properties of hybrid heterojunction Al/ZnPc/ZnO/ITO thin film are studied. The results show that the voltage of open circuit (V_oc=0.567V), a short circuit (I_sc=36 ?A), and the fill factor (FF) of 0.443. In addition, the conversion efficiency of (n=3.4%) is recorded with Xenon lamp with an intensity 235mw/cm2 .


2007 ◽  
Vol 46 (9A) ◽  
pp. 5780-5781 ◽  
Author(s):  
Katsuhiko Moriya ◽  
Kunihiko Tanaka ◽  
Hisao Uchiki

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Mei Kwan Lau ◽  
Jianhua Hao

We have deposited thin films of yttrium aluminum garnet (YAG) doped with Ce3+and Yb3+on quartz and silicon substrates by pulsed laser deposition. Near-infrared (NIR) quantum cutting which involves the emission of NIR photons through the downconversion from Ce3+to Yb3+is realized. Upon the broadband excitation of Ce3+ions with a visible photon at the peak wavelength of 450 nm, NIR photons are generated by Yb3+ions, with an emission wavelength centered at 1030 nm. The luminescent decay curves of Ce3+were recorded as a supporting evidence corresponding to the energy transfer. This work offers a better and more convenient approach compatible with crystalline silicon solar cell compared to conventional bulk phosphors.


2003 ◽  
Vol 431-432 ◽  
pp. 369-372 ◽  
Author(s):  
K. Matsubara ◽  
P. Fons ◽  
K. Iwata ◽  
A. Yamada ◽  
K. Sakurai ◽  
...  

2017 ◽  
Vol 166 ◽  
pp. 91-99 ◽  
Author(s):  
Andrea Cazzaniga ◽  
Andrea Crovetto ◽  
Chang Yan ◽  
Kaiwen Sun ◽  
Xiaojing Hao ◽  
...  

2021 ◽  
Vol 882 ◽  
pp. 155-164
Author(s):  
Jinan A. Abd ◽  
Wasan M. Mohammed ◽  
Amer Al-Nafiey

CdS thin films have been grown on glass substrate at 250o C employing pulsed laser deposition method. The effect of laser pulses number on the crystalline structure, surface morphology, optical properties, and films thickness have been studied. XRD analysis shows that the CdS films have polycrystalline and hexagonal nanostructure with three notable peaks along (100), (002), and (101) planes and preferentially orientated along (101). The crystallite size of the preferred orientation was in the range of (21.4 - 27.3 nm). With small pulses number, XRD pattern confirms the formation of CdO with three peaks (111), (200), and (220). Theses peaks gradually reduce with the increasing of the pulses. The absorbance of the films is in the visible part of the spectrum. The band gap of the synthesized films reduces by rising the number of laser pulses. AFM studies indicate that the grain size and surface roughness increase with the film thickness. Due to the good crystalline structure and optical properties of the film of the highest thickness, it has been grown on a wafer silicon substrate for solar cell applications measurements. Hall measurements indicate low resistivity of 0.3×10-2 (Ω.m) and high conductivity of 3.3×10+2 (Ω.m)-1. The efficiency of the n-CdS/ p-Si junction has been calculated to be 3.4 % using I-V characteristic measurement. Keywords: pulsed laser, thin films, structural, optical, morphology, solar cell measurements


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