Improved photovoltaic effect in CuO/Zn1−xMgxO heterojunction solar cell by pulsed laser deposition

2016 ◽  
Vol 185 ◽  
pp. 230-234 ◽  
Author(s):  
Rashmi Bhardwaj ◽  
Rahul Barman ◽  
Davinder Kaur
Keyword(s):  
Solar Cell ◽  
Pulsed Laser Deposition ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Heterojunction Solar Cell ◽  
Laser Deposition

Hybrid Bilayer Heterojunction Al/ZnPc/ZnO /ITO Thin Films Solar Cell Prepared by Pulsed Laser Deposition

2020 ◽  
Vol 78 (2) ◽  
pp. 12-21
Author(s):  
Mohammed T. Hussein ◽  
Mohammed Jawad H. Kadhim
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Pulsed Laser Deposition ◽  
Indium Tin Oxide ◽  
Short Circuit ◽  
Pulsed Laser ◽  
Transport Layer ◽  
Laser Deposition ◽  
Electron Transport Layer ◽  
Xenon Lamp

Hybrid bilayer heterojunction Zinc Phthalocyanine (ZnPc) thin-film P-type is considered as a donor active layer as well as the Zinc Oxide (ZnO) thin film n-type is considered as an acceptor with (Electron Transport Layer). In this study, using the technique of Q-switching Nd-YAG Pulsed Laser Deposition (PLD) under vacuum condition 10-3 torr on two ITO (Indium Tin Oxide) and (AL) electrodes and aluminum, is used to construct the hydride bilayer photovoltaic solar cell heterojunction (PVSC). The electrical properties of hybrid heterojunction Al/ZnPc/ZnO/ITO thin film are studied. The results show that the voltage of open circuit (V_oc=0.567V), a short circuit (I_sc=36 ?A), and the fill factor (FF) of 0.443. In addition, the conversion efficiency of (n=3.4%) is recorded with Xenon lamp with an intensity 235mw/cm2 .

scholarly journals The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sem Images ◽  
Glass Substrates ◽  
Substrate Temperatures

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

Properties of Fe Doped Amorphous Carbon Thin Films for Photovoltaic Solar Cell Applications

2011 ◽  
Vol 685 ◽  
pp. 110-113 ◽  
Author(s):  
Xin Yu Tan ◽  
Xiao Zhong Zhang ◽  
Cai Hua Wan ◽  
Xi Li Gao
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Annealing Treatment ◽  
Carbon Films ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Raman Scattering Spectroscopy ◽  
Carbon System

The iron-doped amorphous carbon films (a-C: Fe) and Al2O3 films were deposited on n-type silicon substrates using pulsed laser deposition to form (a-C: Fe)/Al2O3/Si solar cells in a pulsed laser deposition (PLD) system. The microstructure of the films was investigated by Raman scattering spectroscopy. The electrical properties of the films were characterized by room temperature electrical conductivity (σ) and the activation energy (Ea). The results show that the Fe-doped amorphous homogeneous structure is formed by Fe diffused into a-C films after annealing treatment. The a-C: Fe films are disordered graphitized carbon system and are rich in sp2. The (a-C: Fe) /Al2O3 /Si junction has good rectifying properties and remarkable Photovoltaic effect.

Fabrication of Cu2ZnSnS4Thin-Film Solar Cell Prepared by Pulsed Laser Deposition

2007 ◽  
Vol 46 (9A) ◽  
pp. 5780-5781 ◽  
Author(s):  
Katsuhiko Moriya ◽  
Kunihiko Tanaka ◽  
Hisao Uchiki
Keyword(s):  
Solar Cell ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals Broadband Near-Infrared Quantum Cutting in Metal-Ion Codoped Y3Al5O12Thin Films Grown by Pulsed-Laser Deposition for Solar Cell Application

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Mei Kwan Lau ◽  
Jianhua Hao
Keyword(s):  
Solar Cell ◽  
Pulsed Laser Deposition ◽  
Metal Ion ◽  
Near Infrared ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Supporting Evidence ◽  
Crystalline Silicon Solar Cell ◽  
Solar Cell Application ◽  
Quantum Cutting

We have deposited thin films of yttrium aluminum garnet (YAG) doped with Ce3+and Yb3+on quartz and silicon substrates by pulsed laser deposition. Near-infrared (NIR) quantum cutting which involves the emission of NIR photons through the downconversion from Ce3+to Yb3+is realized. Upon the broadband excitation of Ce3+ions with a visible photon at the peak wavelength of 450 nm, NIR photons are generated by Yb3+ions, with an emission wavelength centered at 1030 nm. The luminescent decay curves of Ce3+were recorded as a supporting evidence corresponding to the energy transfer. This work offers a better and more convenient approach compatible with crystalline silicon solar cell compared to conventional bulk phosphors.

ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications

2003 ◽  
Vol 431-432 ◽  
pp. 369-372 ◽  
Author(s):  
K. Matsubara ◽  
P. Fons ◽  
K. Iwata ◽  
A. Yamada ◽  
K. Sakurai ◽  
...  
Keyword(s):  
Solar Cell ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transparent Conducting Films ◽  
Transparent Conducting
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