New Negative-Bias-Temperature-Instability Improvement Using Buffer Layer under Highly Compressive Contact Etch Stop Layer for 45-nm-Node Complementary Metal–Oxide–Semiconductor and Beyond

Cheng-Tung Huang; Kun-Hsien Lee; Li-Shian Jeng; Wen-Han Hung; Shyh-Fann Ting; Meng-Yi Wu; Mei-Lun Tseng; Osbert Cheng; Chia-Wen Liang

doi:10.1143/jjap.46.2015

New Negative-Bias-Temperature-Instability Improvement Using Buffer Layer under Highly Compressive Contact Etch Stop Layer for 45-nm-Node Complementary Metal–Oxide–Semiconductor and Beyond

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2015 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2015-2018

Author(s):

Cheng-Tung Huang ◽

Kun-Hsien Lee ◽

Li-Shian Jeng ◽

Wen-Han Hung ◽

Shyh-Fann Ting ◽

...

Keyword(s):

Metal Oxide ◽

Buffer Layer ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability ◽

Etch Stop ◽

Etch Stop Layer

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A 65 nm Complementary Metal–Oxide–Semiconductor 400 ns Measurement Delay Negative-Bias-Temperature-Instability Recovery Sensor with Minimum Assist Circuit

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04de06 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DE06 ◽

Cited By ~ 2

Author(s):

Takashi Matsumoto ◽

Hiroaki Makino ◽

Kazutoshi Kobayashi ◽

Hidetoshi Onodera

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Measurement Delay

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Improvement of Negative-Bias-Temperature Instability in SiN-Capped p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Using Ultrathin HfO[sub 2] Buffer Layer

Journal of The Electrochemical Society ◽

10.1149/1.2792186 ◽

2007 ◽

Vol 154 (12) ◽

pp. H1036

Author(s):

Ching-Sen Lu ◽

Horng-Chih Lin ◽

Yao-Jen Lee

Keyword(s):

Metal Oxide ◽

Buffer Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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A 65 nm Complementary Metal–Oxide–Semiconductor 400 ns Measurement Delay Negative-Bias-Temperature-Instability Recovery Sensor with Minimum Assist Circuit

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04de06 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DE06 ◽

Cited By ~ 4

Author(s):

Takashi Matsumoto ◽

Hiroaki Makino ◽

Kazutoshi Kobayashi ◽

Hidetoshi Onodera

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Measurement Delay

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Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs)

Chinese Physics ◽

10.1088/1009-1963/16/7/052 ◽

2007 ◽

Vol 16 (7) ◽

pp. 2111-2115 ◽

Cited By ~ 3

Author(s):

Liu Hong-Xia ◽

Hao Yue

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Hot Carriers ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability

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Negative bias temperature instability in SOI‐like p‐type metal oxide semiconductor devices

Micro & Nano Letters ◽

10.1049/mnl.2018.0012 ◽

2018 ◽

Vol 13 (8) ◽

pp. 1151-1154

Author(s):

Lijie Li ◽

Chan Shan ◽

Ying Wang ◽

Xin Luo

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc08 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC08

Author(s):

Liangliang Zhang ◽

Changze Liu ◽

Runsheng Wang ◽

Ru Huang ◽

Tao Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Stress Condition ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Device Characteristics and Aggravated Negative Bias Temperature Instability inp-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3064 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3064-3069 ◽

Cited By ~ 8

Author(s):

Chia-Yu Lu ◽

Horng-Chih Lin ◽

Yi-Feng Chang ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Compressive Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Effects of processing conditions on negative bias temperature instability in metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.99154 ◽

1988 ◽

Vol 52 (16) ◽

pp. 1344-1346 ◽

Cited By ~ 15

Author(s):

D. Lu ◽

G. A. Ruggles ◽

J. J. Wortman

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Processing Conditions ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Semiconductor Structures ◽

Bias Temperature Instability

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Effect of Etch Stop Layer Stress on Negative Bias Temperature Instability of Deep Submicron p-Type Metal–Oxide–Semiconductor Field Effect Transistors with Dual Gate Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2624 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2624-2627 ◽

Cited By ~ 1

Author(s):

Ming-Shing Chen ◽

Yean-Kuen Fang ◽

Tung-Hsing Lee ◽

Chien-Ting Lin ◽

Yen-Ting Chiang ◽

...

Keyword(s):

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability ◽

Dual Gate ◽

Etch Stop ◽

Etch Stop Layer ◽

P Type

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The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/19/9/097306 ◽

2010 ◽

Vol 19 (9) ◽

pp. 097306 ◽

Cited By ~ 6

Author(s):

Cao Yan-Rong ◽

Ma Xiao-Hua ◽

Hao Yue ◽

Tian Wen-Chao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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