Applications of Wide-Band-Gap Materials for Optoelectronic Functional Devices Fabricated by a Pair of Interfering Femtosecond Laser Pulses

2005 ◽  
Vol 44 (2) ◽  
pp. 910-913 ◽  
Author(s):  
Toshio Kurobori ◽  
Tomoya Yamakage ◽  
Yukio Hirose ◽  
Ken-ichi Kawamura ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Band Gap ◽  
Wide Band ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Wide Band Gap

Wide band-gap materials microprocessing by femtosecond laser pulses

2004 ◽  
Author(s):  
Egidijus Vanagas ◽  
Jouji Kawai ◽  
Yury Zaparozhchanka ◽  
Dmitry Tuzhilin ◽  
Hirofumi Musasa ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Band Gap ◽  
Wide Band ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Wide Band Gap

scholarly journals Femtosecond laser ablation of wide band-gap materials

2012 ◽  
Vol 261 ◽  
pp. 705-707 ◽  
Author(s):  
Hidetoshi Takayama ◽  
Toshiro Maruyama
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Band Gap ◽  
Femtosecond Laser Ablation ◽  
Wide Band ◽  
Wide Band Gap

Structural and optical property tailoring of black silicon with fs-laser pulses

2012 ◽  
Vol 1405 ◽  
Author(s):  
S. Kontermann ◽  
A. L. Baumann ◽  
T. Gimpel ◽  
K.M. Guenther ◽  
A. Ruibys ◽  
...  
Keyword(s):  
Solar Cell ◽  
Femtosecond Laser ◽  
Band Gap ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Thick Layer ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Black Silicon ◽  
Material Characteristics

ABSTRACTIrradiating a planar silicon surface with femtosecond laser pulses under a sulfuric atmosphere creates first a structured surface featuring cones of up to 20 microns in height, and second a 0.1 – 1 μ m thick layer of multi-crystalline silicon on theses cones containing up to 1 at.% sulfur acting as n-type dopant. Further, the sulfur establishes energy states within the band gap of silicon allowing for the absorption of infrared (IR) light with energies below the band gap energy of silicon. This black silicon process is distinguished by the fact that only one single laser process is required to tailor three material characteristics in on step: the surface structure, the doping and the light absorption. In this work we study structural and optical material characteristics of black silicon. For the first time this work presents properties of black silicon processed with shaped femtosecond laser pulses. Finally, black silicon substrate is used as substrate for manufacturing a black silicon solar cell with a femtosecond laser pulse formed sulfur emitter. For such a black silicon solar cell we achieved a record efficiency of η =4.5%

Processing microgrooves and craters on the surface of wide band gap mold material using femtosecond laser

2010 ◽  
Author(s):  
Qingliang Zhao ◽  
Tao Jiang ◽  
Zhiwei Dong ◽  
Rongwei Fan ◽  
Xin Yu
Keyword(s):  
Femtosecond Laser ◽  
Band Gap ◽  
Wide Band ◽  
Mold Material ◽  
Wide Band Gap
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