Two-Dimensional Quantum-Mechanical Modeling and Simulation of Strained-Si Fin Field Effect Transistor (FinFET) on SiGe-On-Insulator

2005 ◽  
Vol 44 (4B) ◽  
pp. 2680-2683 ◽  
Author(s):  
Il-soo Park ◽  
Kidong Kim ◽  
Taeyoung Won
ACS Nano ◽  
2021 ◽  
Author(s):  
Parvin Fathi-Hafshejani ◽  
Nurul Azam ◽  
Lu Wang ◽  
Marcelo A. Kuroda ◽  
Michael C. Hamilton ◽  
...  

2018 ◽  
Vol 114 ◽  
pp. 62-74 ◽  
Author(s):  
R. Ranjith ◽  
Remya Jayachandran ◽  
K.J. Suja ◽  
Rama S. Komaragiri

2021 ◽  
Author(s):  
Qizhi Xu ◽  
Boyuan Zhang ◽  
Yihang Zeng ◽  
Amirali Zangiabadi ◽  
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Ultrathin porous films held together by non-covalent van der Waals interactions was obtained by a top-down approach, which is then utilized as channel material in a two-dimensional planar field-effect transistor device through easy stamp transfer.


2016 ◽  
Vol 37 (7) ◽  
pp. 074001 ◽  
Author(s):  
Amandeep Singh ◽  
Dinesh Kumar Saini ◽  
Dinesh Agarwal ◽  
Sajal Aggarwal ◽  
Mamta Khosla ◽  
...  

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