Measurements of Minute Lattice Distortions in Silicon Crystals by X-Ray Double-Crystal Topography Using Extremely Asymmetric Reflection

2004 ◽  
Vol 43 (12) ◽  
pp. 8331-8334
Author(s):  
Taichiro Fukumori ◽  
Koji Futagami ◽  
Kiyohiro Kuroki
Keyword(s):  
Double Crystal ◽  
X Ray ◽  
Silicon Crystals ◽  
Asymmetric Reflection ◽  
Lattice Distortions

Position of exit X-rays from rotated-inclined double-crystal monochromators

1998 ◽  
Vol 5 (3) ◽  
pp. 679-681 ◽  
Author(s):  
Yasuharu Kashihara ◽  
Hiroshi Yamazaki ◽  
Kenji Tamasaku ◽  
Tetsuya Ishikawa
Keyword(s):  
Heat Load ◽  
Diffraction Theory ◽  
Third Generation ◽  
X Rays ◽  
Double Crystal ◽  
Undulator Radiation ◽  
X Ray ◽  
Double Crystal Monochromator ◽  
Asymmetric Reflection ◽  
Wide Range

The rotated-inclined double-crystal monochromator (RIDCM) has been adopted to reduce the heat load from third-generation undulator radiation. The position of the exit X-rays from RIDCM has been calculated as a function of X-ray energy on the basis of diffraction theory including refraction effects. The results show that the positions of the exit X-rays vary over a wide range due to asymmetric reflection. Methods of fixing the exit position in RIDCM are also discussed.

Fracture studies in silicon crystals by X-Ray pendellösung fringes and double-crystal diffractometry

1973 ◽  
Vol 4 (1) ◽  
pp. 376-377 ◽  
Author(s):  
S. Weissmann ◽  
Y. Tsunekawa ◽  
V. C. Kannan
Keyword(s):  
Double Crystal ◽  
X Ray ◽  
Silicon Crystals

scholarly journals X-ray reflectivity of chemically vapor-deposited diamond single crystals in the Laue geometry

2018 ◽  
Vol 74 (5) ◽  
pp. 567-577 ◽  
Author(s):  
S. Stoupin ◽  
J. P. C. Ruff ◽  
T. Krawczyk ◽  
K. D. Finkelstein
Keyword(s):  
Diamond Crystal ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Asymmetric Reflection ◽  
Single Crystal Diamond ◽  
Diamond Single Crystals ◽  
Chemically Vapor Deposited ◽  
Independent Parameters ◽  
Laue Geometry

The absolute X-ray reflectivity of chemically vapor-deposited (CVD) single-crystal diamond plates was measured in the Laue geometry in the double-crystal non-dispersive setting with an asymmetric Si beam-conditioner crystal. The measurements were supplemented by rocking-curve topography. The measured reflectivity curves are examined in the framework of the Darwin–Hamilton approach using a set of two independent parameters: the characteristic thickness of mosaic blocks and their average angular misorientation. Owing to strong extinction effects, the width of the reflectivity curves does not directly represent the average misorientation of the blocks. Two different sets of parameters were found for the 111 asymmetric reflection in the two different scattering configurations (beam compression and beam expansion). Analysis of the rocking-curve topographs shows that this discrepancy can be attributed to inhomogeneity of the diamond crystal microstructure.

scholarly journals A middle energy-bandwidth X-ray monochromator for high-flux synchrotron diffraction: revisiting asymmetrically cut silicon crystals

2019 ◽  
Vol 26 (3) ◽  
pp. 750-755 ◽  
Author(s):  
Hiroo Tajiri ◽  
Hiroshi Yamazaki ◽  
Haruhiko Ohashi ◽  
Shunji Goto ◽  
Osami Sakata ◽  
...  
Keyword(s):  
Atomic Plane ◽  
Photon Flux ◽  
Wide Energy Range ◽  
Double Crystal ◽  
X Ray ◽  
Silicon Crystals ◽  
Double Crystal Monochromator ◽  
Diffraction Geometry ◽  
Wide Energy ◽  
Surface Diffraction

To supply the growing demand for high photon flux in synchrotron science including surface diffraction, a middle energy-bandwidth monochromator covering the 10−4 to 10−3 range has been adapted by applying an asymmetric diffraction geometry to a cryogenically cooled silicon 111 double-crystal monochromator used as a standard for the undulator source at SPring-8. The asymmetric geometry provides a great advantage with its ability to configure flux gains over a wide energy range by simply changing the asymmetry angle, while the angular divergence of the exit beam remains unchanged. A monolithic design with three faces has been employed, having one symmetrically cut and another two asymmetrically cut surfaces relative to the same atomic plane, maintaining cooling efficiency and the capability of quickly changing the reflection surface. With the asymmetric geometry, an X-ray flux greater than 1014 photons s−1 was available around 12 keV. A maximum gain of 2.5 was obtained relative to the standard symmetric condition.

Examination of Surface-Roughness of Silicon Crystals by Double-Crystal X-Ray Topography

1988 ◽  
Vol 27 (Part 1, No. 6) ◽  
pp. 1113-1114
Author(s):  
Michio Niwano ◽  
Tadashi Kobayashi ◽  
Nobuo Miyamoto
Keyword(s):  
Surface Roughness ◽  
Double Crystal ◽  
X Ray ◽  
Silicon Crystals

X-Ray Double Crystal Topography of Processed Silicon Wafers

1986 ◽  
Vol 82 ◽  
Author(s):  
Neil Loxley ◽  
Brian K. Tanner
Keyword(s):  
Synchrotron Radiation ◽  
Spatial Resolution ◽  
Lattice Parameter ◽  
Silicon Wafers ◽  
Dislocation Loops ◽  
Double Crystal ◽  
X Ray ◽  
Asymmetric Reflection ◽  
Silicon Device ◽  
Better Than

ABSTRACTDouble crystal topographs of a processed silicon device wafer, taken in highly asymmetric reflection conditions using synchrotron radiation are presented. By using a variety of wavelengths and reflections the depth and distribution of defects generated by the fabrication process are explored. Examples of several reflections are given, with a spatial resolution of better than 5 microns and extremely high device and defect visibility. Results suggest that a high mismatch of lattice parameter at device edges leads to the formation of dislocation loops penetrating junctions.

X-ray measurement of minute lattice strain in perfect silicon crystals

1981 ◽  
Vol 156 (3-4) ◽  
Author(s):  
U. Bonse ◽  
I. Hartmann
Keyword(s):  
Residual Strain ◽  
Lattice Strain ◽  
High Sensitivity ◽  
Neutron Interferometry ◽  
Double Crystal ◽  
Strain Measurements ◽  
X Ray ◽  
Silicon Crystals ◽  
Float Zone ◽  
Quantitative Manner

AbstractThe residual strain still present in nearly perfect silicon single crystals has been measured quantitatively by using double crystal topography at high reflexion orders.High quality float zone crystals from different suppliers were found to vary in residual strain from 2 × 10The high sensitivity strain measurements are very useful to measure in a quantitative manner the degree of lattice perfection of so-called nearly perfect crystals. The results are already useful for neutron interferometry and, possibly, may become so for microintegration of devices.

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