Fracture studies in silicon crystals by X-Ray pendellösung fringes and double-crystal diffractometry

1973 ◽  
Vol 4 (1) ◽  
pp. 376-377 ◽  
Author(s):  
S. Weissmann ◽  
Y. Tsunekawa ◽  
V. C. Kannan
2019 ◽  
Vol 26 (3) ◽  
pp. 750-755 ◽  
Author(s):  
Hiroo Tajiri ◽  
Hiroshi Yamazaki ◽  
Haruhiko Ohashi ◽  
Shunji Goto ◽  
Osami Sakata ◽  
...  

To supply the growing demand for high photon flux in synchrotron science including surface diffraction, a middle energy-bandwidth monochromator covering the 10−4 to 10−3 range has been adapted by applying an asymmetric diffraction geometry to a cryogenically cooled silicon 111 double-crystal monochromator used as a standard for the undulator source at SPring-8. The asymmetric geometry provides a great advantage with its ability to configure flux gains over a wide energy range by simply changing the asymmetry angle, while the angular divergence of the exit beam remains unchanged. A monolithic design with three faces has been employed, having one symmetrically cut and another two asymmetrically cut surfaces relative to the same atomic plane, maintaining cooling efficiency and the capability of quickly changing the reflection surface. With the asymmetric geometry, an X-ray flux greater than 1014 photons s−1 was available around 12 keV. A maximum gain of 2.5 was obtained relative to the standard symmetric condition.


1988 ◽  
Vol 27 (Part 1, No. 6) ◽  
pp. 1113-1114
Author(s):  
Michio Niwano ◽  
Tadashi Kobayashi ◽  
Nobuo Miyamoto

Author(s):  
U. Bonse ◽  
I. Hartmann

AbstractThe residual strain still present in nearly perfect silicon single crystals has been measured quantitatively by using double crystal topography at high reflexion orders.High quality float zone crystals from different suppliers were found to vary in residual strain from 2 × 10The high sensitivity strain measurements are very useful to measure in a quantitative manner the degree of lattice perfection of so-called nearly perfect crystals. The results are already useful for neutron interferometry and, possibly, may become so for microintegration of devices.


1986 ◽  
Vol 47 (C8) ◽  
pp. C8-135-C8-137
Author(s):  
T. MURATA ◽  
T. MATSUKAWA ◽  
M. MORI ◽  
M. OBASHI ◽  
S.-I. NAO-E ◽  
...  

1971 ◽  
Vol 42 (2) ◽  
pp. 196-199 ◽  
Author(s):  
Virgil E. Bottom ◽  
Renê Ayres Carvalho

1991 ◽  
Vol 239 ◽  
Author(s):  
J.-M. Baribeau ◽  
D. J. Lockwood

ABSTRACTStrain shift coefficient measurements for longitudinal optical phonons in molecular beam epitaxy grown metastable pseudomorphic Si1−xGex layers on (100) Si (0 < x < 0.35) and Ge (0.80 < x < 1) are reported. Strain in partially relaxed annealed specimens was obtained by double-crystal x-ray diffractometry and the corresponding strain phonon shift was measured by Raman scattering spectroscopy. For epilayers grown on Si it was found that the epilayer Si-Si phonon frequency varies linearly with strain. The magnitude of the strain shift coefficient b however showed a small composition dependence varying from b ≈ -700 cm-1 at x = 0 to b ≈ -950 cm-1 at x = 0.35, corresponding to a stress factor τ = 0.40 + 0.57x: + 0.13x2 cm-1/kbar. For the Ge-Ge vibration mode in epilayers grown on Ge, b decreased from ∼-425 cm-1 at x = 1 to ∼-500 cm-1 at x = 0.8, corresponding to a stress factor τ ≈ 0.52 – 0.14x - 0.08x2 cm-1/kbar.


1988 ◽  
Vol 138 ◽  
Author(s):  
S. J. Miles ◽  
G. S. Green ◽  
B. K. Tanner ◽  
M. A. G. Halliwell ◽  
M. H. Lyons

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