Pt/SrBi2Ta2O9/Hf-Al-O/Si Field-Effect-Transistor with Long Retention Using Unsaturated Ferroelectric Polarization Switching

2004 ◽  
Vol 43 (11B) ◽  
pp. 7876-7878 ◽  
Author(s):  
Shigeki Sakai ◽  
Rajangam Ilangovan ◽  
Mitsue Takahashi
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Polarization Switching ◽  
Ferroelectric Polarization ◽  
Effect Transistor

scholarly journals In‐Depth Atomic Mapping of Polarization Switching in a Ferroelectric Field‐Effect Transistor

2020 ◽  
Vol 7 (14) ◽  
pp. 2000601
Author(s):  
Xiaoyan Li ◽  
Qiuxiang Zhu ◽  
Lorenzo Vistoli ◽  
Agnès Barthélémy ◽  
Manuel Bibes ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Polarization Switching ◽  
Effect Transistor

Memory window in ferroelectric PVDF copolymer gate integrated MOSFET devices for nondestructive readout memory application

2007 ◽  
Vol 997 ◽  
Author(s):  
Sang-Hyun Lim ◽  
Alok C Rastogi ◽  
Seshu B Desu
Keyword(s):  
Threshold Voltage ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
Polyvinylidene Fluoride ◽  
Field Effect Transistor ◽  
Memory Window ◽  
Polarization Field ◽  
Ferroelectric Polarization ◽  
Effect Transistor ◽  
Ionic Polarization

AbstractMetal-Ferroelectric-Oxide-Si (MFEOS) field effect transistor (FET) with ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (PVDF-TrFE) gate for nonvolatile memory application is demonstrated. Memory window ascribed to ferroelectric polarization switching has been quantified by shift of threshold voltage are ~ 4-5V. Non saturating IDS is due to free ionic polarization field. IDS-VDS characteristics of functional FET are realized after AC poling.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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