Electrical Properties of Bi4-xLaxTi3O12Ferroelectric Thin Films Prepared by Metalorganic Decomposition Method

2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 727-730 ◽  
Author(s):  
Woo Seok Yang ◽  
Nam Kyeong Kim ◽  
Seung Jin Yeom ◽  
Soon Yong Kweon ◽  
Jae Sung Roh
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Decomposition Method ◽  
Metalorganic Decomposition

Ferroelectric Characteristics of SrxBi2.4Ta2O9 Thin Films and Electrical Properties of the Pt/SrxBi2.4Ta2O9/TiO2/Si Structure

2004 ◽  
Vol 449-452 ◽  
pp. 477-480
Author(s):  
J.H. Choi ◽  
Tae Sung Oh
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Memory Window ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Metalorganic Decomposition ◽  
Ferroelectric Hysteresis

Ferroelectric characteristics of the 400 nm-thick SrxBi2.4Ta2O9(0.7≤x≤1.3) thin films processed by metalorganic decomposition were investigated, and electrical properties of the Pt/Sr0.85Bi2.4Ta2O9/TiO2/Si structure prepared using TiO2 buffer layer were characterized. The Sr-deficient SrxBi2.4Ta2O9 films exhibited well-developed ferroelectric hysteresis curves compared to those of the Sr-excess films. The Sr0.85Bi2.4Ta2O9 film exhibited optimum ferroelectric properties, such as high remanent polarization and low leakage current density, among SrxBi2.4Ta2O9 films. A memory window of the Pt/SrxBi2.4Ta2O9/TiO2/Si structure was dependent upon the coercive field of the SrxBi2.4Ta2O9 film, and the Pt/SrxBi2.4Ta2O9/TiO2/Si exhibited a maximum memory window of 1.3 V at the sweeping voltage of ±5 V.

Dielectric properties of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films fabricated by metalorganic decomposition method

2001 ◽  
Vol 78 (22) ◽  
pp. 3517-3519 ◽  
Author(s):  
Woo-Chul Yi ◽  
T. S. Kalkur ◽  
Elliott Philofsky ◽  
Lee Kammerdiner ◽  
Anthony A. Rywak
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Decomposition Method ◽  
Metalorganic Decomposition ◽  
Mg Doped

Impacts of postannealing ambient atmospheres on Pt/SrBi2.2Ta2O9/Pt capacitors

2001 ◽  
Vol 16 (12) ◽  
pp. 3526-3535 ◽  
Author(s):  
Ai-Dong Li ◽  
Tao Yu ◽  
Hui-Qin Ling ◽  
Di Wu ◽  
Zhi-Guo Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Coercive Field ◽  
Decomposition Method ◽  
Ferroelectric Properties ◽  
Annealing Atmosphere ◽  
Oxygen Loss ◽  
Si Substrates ◽  
Gas Processing ◽  
Structure Morphology ◽  
Metalorganic Decomposition

SrBi2Ta2O9 (SBT) films were prepared on Pt/TiO2/SiO2/Si substrates at 750 °C in oxygen by the metalorganic decomposition method. SBT film capacitors were postannealed in Ar (N2) at 350–750 °C and then reannealed in O2 at 750 °C. Effects of annealing atmosphere on the structure, morphology, and ferroelectric properties have been investigated systematically. The composition analyses indicate Ar- or N2-annealing at 750 °C leads to Bi evaporation and oxygen loss. Above 550 °C 100% Ar or N2 postannealing, the remnant polarization decreases and the coercive field increases significantly. The subsequent O2 recovery can hardly rejuvenate the electrical properties. The result is different from that with the effective O2 recovery in forming gas processing (annealing in an atmosphere containing 5% hydrogen). The possible origin and mechanism is discussed and proposed.

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

2002 ◽  
Vol 190 (1-4) ◽  
pp. 88-95 ◽  
Author(s):  
K.M.A. Salam ◽  
Hidekazu Konishi ◽  
Masahiro Mizuno ◽  
Hisashi Fukuda ◽  
Shigeru Nomura
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
Metalorganic Decomposition
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