Dielectric properties of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films fabricated by metalorganic decomposition method

2001 ◽  
Vol 78 (22) ◽  
pp. 3517-3519 ◽  
Author(s):  
Woo-Chul Yi ◽  
T. S. Kalkur ◽  
Elliott Philofsky ◽  
Lee Kammerdiner ◽  
Anthony A. Rywak
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Decomposition Method ◽  
Metalorganic Decomposition ◽  
Mg Doped

Structure and Dielectric Properties of Mg, Cr-Doped LaSrFeO3 Films

2014 ◽  
Vol 538 ◽  
pp. 11-14
Author(s):  
Yang Lu Hou ◽  
Xing Hua Fu ◽  
Wen Hong Tao ◽  
Xin Jin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Doping Amount ◽  
Single Perovskite Phase ◽  
Pure Perovskite Phase ◽  
Mg Doped

Mg-doped LaFeO3 thin film and Mg, Cr-doped La0.5Sr0.5FeO3 thin films were prepared by the sol-gel method. The change rules of structure and dielectric properties of the films were studied by XRD, SEM, and Agilent. The dielectric properties of La0.5Sr0.5FeO3 and LaFeO3 films were improved by the substitute with Mg and Cr. The doping amount of Mg and Cr for the optimal dielectric properties of La0.5Sr0.5FeO3 films is 45mol%, 25mol%, respectively, and for LaFeO3, the doping amount of Mg is 8mol%. The observed pure perovskite phase of the doped films suggested the dissolution of Mn, Co, and Ni in La0.5Sr0.5FeO3 crystal lattice. Mg and Cr were integrate in the lattice of LaFeO3 and La0.5Sr0.5FeO3, and mineral is single perovskite phase. The surface of the film is smooth, without cracks, surface grain size distribution and had uniform grain size.

Dielectric Properties at Microwaves Frequencies of (Ni, Ti, La, Mg)-Doped Ba0.3Sr0.7TiO3 Thin Films Deposited onHigh-Resistivity Silicon Substrates

2011 ◽  
Vol 94 (6) ◽  
pp. 1661-1663 ◽  
Author(s):  
Freddy Ponchel ◽  
Denis Rémiens ◽  
Jean Midy ◽  
Jean-Fançois Legier ◽  
Caroline Soyer ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Silicon Substrates ◽  
Mg Doped

Electrical Properties of Bi4-xLaxTi3O12Ferroelectric Thin Films Prepared by Metalorganic Decomposition Method

2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 727-730 ◽  
Author(s):  
Woo Seok Yang ◽  
Nam Kyeong Kim ◽  
Seung Jin Yeom ◽  
Soon Yong Kweon ◽  
Jae Sung Roh
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Decomposition Method ◽  
Metalorganic Decomposition

STUDY OF THE STRUCTURE AND PROPERTIES OF (Bi1-xCex)2Ti2O7 THIN FILMS PREPARED BY CHEMICAL SOLUTION DECOMPOSITION METHOD

2011 ◽  
Vol 18 (01n02) ◽  
pp. 17-21 ◽  
Author(s):  
XIANGYANG JING ◽  
YANGBO HOU ◽  
XIAOYANG ZHANG ◽  
XIAOYAN QIN
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Decomposition Method ◽  
Annealing Temperature ◽  
Structure And Properties ◽  
Chemical Solution ◽  
Phase Transition Temperatures ◽  
Different Temperatures ◽  
The Relationship ◽  
Variation Tendency

( Bi 1-x Ce x)2 Ti 2 O 7 thin films were grown on p- Si 〈100〉 substrates by chemical solution decomposition method. The relationship between the doping levels of cerium ions and the phase transition temperatures was studied. The doping of cerium ions could improve the phase stability of Bi 2 Ti 2 O 7, and the reason was comprehensively explained by the charge compensating theory. The doping of Ce ions enhances the crystallization temperature, which make the crystallization difficult, so the amount of cerium ions should be kept appropriate. The dielectric properties of ( Bi 1-x Ce x)2 Ti 2 O 7 thin films with different X values at different temperatures and different doping levels were listed, and the latent variation tendency was found. When the annealing temperature was 650–700°C and X = 0.12 or 0.16, the thin films showed better dielectric properties than the others.

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