Control of Dot Size and Tunneling Barrier Profile in In0.53Ga0.47As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 421-424 ◽  
Author(s):  
Hajime Fujikura ◽  
Yuuki Hanada ◽  
Tsutomu Muranaka ◽  
Hideki Hasegawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wire ◽  
Molecular Beam ◽  
Tunneling Barrier ◽  
Inp Substrates

1.5 μm Range Self-Organized In0.65Ga0.35As/In0.52Al0.48As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
K. Hyodo ◽  
Y. Ohno ◽  
H. Kanamori ◽  
T. Kitada ◽  
S. Shimomura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wire ◽  
Room Temperature ◽  
Molecular Beam ◽  
Polarization Degree ◽  
Self Organized ◽  
Best Value ◽  
Inp Substrate ◽  
Inp Substrates ◽  
Quantum Well Layer

ABSTRACTHigh quality quantum wire (QWR) structures with an emitting wavelength in the 1.5-μm range were self-organized in an In0.65Ga0.35As/In0.52Al0.48As quantum well layer grown on a (775)B-oriented InP substrate by molecular beam epitaxy. Photoluminescence (PL) from the (775)B In0.65Ga0.35As/In0.52Al0.48As QWRs with a nominal well width of 4.8 nm was observed at 1.43 μm at 12 K, which corresponds to a PL wavelength of about 1.5 μm at room temperature. The PL peak was considerably polarized along the wire direction with a polarization degree of P [= (I∥ - I⊥) / (I∥ + I] ⊥)] = 0.14, indicating its good one-dimensionality. The FWHM of the PL peak was as small as 17 meV, which is the best value for InGaAs QWRs on InP substrates.

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy

2003 ◽  
Vol 12 (2) ◽  
pp. 218-221 ◽  
Author(s):  
Zhou Da-Yong ◽  
Lan Qing ◽  
Kong Yun-Chuan ◽  
Miao Zhen-Hua ◽  
Feng Song-Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Quantum Wire ◽  
Molecular Beam ◽  
Step Bunching ◽  
Wire Arrays

Controlled Formation of Narrow and Uniform InP-Based In0.53Ga0.47As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1532-1539 ◽  
Author(s):  
Hajime Fujikura ◽  
Yuuki Hanada ◽  
Michio Kihara ◽  
Hideki Hasegawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wire ◽  
Molecular Beam ◽  
Wire Arrays

Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

2008 ◽  
Vol 93 (4) ◽  
pp. 041913 ◽  
Author(s):  
Houssam Chouaib ◽  
Catherine Bru-Chevallier ◽  
Aleksandra Apostoluk ◽  
Wojciech Rudno-Rudzinski ◽  
Melania Lijadi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Molecular Beam ◽  
Inp Substrates ◽  
Surface Fermi Level
Sign in / Sign up

Export Citation Format

Share Document