A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1966-1971 ◽  
Author(s):  
Masashi Akabori ◽  
Junichi Motohisa ◽  
Tomoki Irisawa ◽  
Shinjiroh Hara ◽  
Jun-ya Ishizaki ◽  
...  
Keyword(s):  
Transport Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Electron Wave ◽  
Wave Interference

Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy

2004 ◽  
Vol 43 (6A) ◽  
pp. 3356-3359 ◽  
Author(s):  
Chengxin Wang ◽  
Narihiko Maeda ◽  
Kotaro Tsubaki ◽  
Naoki Kobayashi ◽  
Toshiki Makimoto
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Electron Transport Properties ◽  
Si Doped

Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grown by low pressure metalorganic vapor phase epitaxy

2003 ◽  
Vol 93 (9) ◽  
pp. 5460-5464
Author(s):  
L. K. Hanamoto ◽  
C. M. A. Farias ◽  
A. B. Henriques ◽  
C. V. B. Tribuzy ◽  
P. L. Souza ◽  
...  
Keyword(s):  
Transport Properties ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Interface Layers

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 268-273 ◽  
Author(s):  
M.A. Tischler ◽  
R.M. Potemski ◽  
T.F. Kuech ◽  
F. Cardone ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Acceptor Doping
Sign in / Sign up

Export Citation Format

Share Document